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Division Spotlight
Operations & Power
Members focus on the dissemination of knowledge and information in the area of power reactors with particular application to the production of electric power and process heat. The division sponsors meetings on the coverage of applied nuclear science and engineering as related to power plants, non-power reactors, and other nuclear facilities. It encourages and assists with the dissemination of knowledge pertinent to the safe and efficient operation of nuclear facilities through professional staff development, information exchange, and supporting the generation of viable solutions to current issues.
Meeting Spotlight
2024 ANS Annual Conference
June 16–19, 2024
Las Vegas, NV|Mandalay Bay Resort and Casino
Standards Program
The Standards Committee is responsible for the development and maintenance of voluntary consensus standards that address the design, analysis, and operation of components, systems, and facilities related to the application of nuclear science and technology. Find out What’s New, check out the Standards Store, or Get Involved today!
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Latest News
College students help develop waste-measuring device at Hanford
A partnership between Washington River Protection Solutions (WRPS) and Washington State University has resulted in the development of a device to measure radioactive and chemical tank waste at the Hanford Site. WRPS is the contractor at Hanford for the Department of Energy’s Office of Environmental Management.
Ruixuan Han, Liucheng Liu, Rui Tu, Wei Xiao, Yingying Li, Huailin Li, Dan Shao
Nuclear Technology | Volume 195 | Number 2 | August 2016 | Pages 192-203
Technical Paper | doi.org/10.13182/NT15-109
Articles are hosted by Taylor and Francis Online.
Iodine atom interstitial configurations and diffusion in bulk β-SiC and α-Zr are calculated using first-principles calculations and the nudged elastic band method. The formation energy of an I interstitial in bulk silicon carbide (SiC) is ten times higher than that of an I interstitial in bulk Zr. The I interstitial is very difficult to introduce into bulk SiC compared with the doping process in bulk Zr. The diffusion mechanisms of an I atom in SiC and Zr are exchange mechanisms. Iodine interstitial diffusion in bulk SiC is roughly an isotropic process along a path that is a series of combinations of ISi → Ic and Ic → ISi, with a diffusion barrier of 1.20 eV and an attempt-to-diffuse frequency Γ0 25.12 THz. Meanwhile, I interstitial diffusion in bulk Zr is an anisotropic process. An I interstitial atom diffuses mainly between two Zr atom [0001] layers along a zigzag path with a diffusion barrier of 0.16 eV and an attempt-to-diffuse frequency Γ0 = 2.88 THz. In general, the diffusion rate of an I interstitial in bulk SiC is lower than that in bulk Zr in the temperature range from 290 to 3000 K. The defect effect on I diffusion is an interesting topic for future study.