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2024 ANS Annual Conference
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Glass strategy: Hanford’s enhanced waste glass program
The mission of the Department of Energy’s Office of River Protection (ORP) is to complete the safe cleanup of waste resulting from decades of nuclear weapons development. One of the most technologically challenging responsibilities is the safe disposition of approximately 56 million gallons of radioactive waste historically stored in 177 tanks at the Hanford Site in Washington state.
ORP has a clear incentive to reduce the overall mission duration and cost. One pathway is to develop and deploy innovative technical solutions that can advance baseline flow sheets toward higher efficiency operations while reducing identified risks without compromising safety. Vitrification is the baseline process that will convert both high-level and low-level radioactive waste at Hanford into a stable glass waste form for long-term storage and disposal.
Although vitrification is a mature technology, there are key areas where technology can further reduce operational risks, advance baseline processes to maximize waste throughput, and provide the underpinning to enhance operational flexibility; all steps in reducing mission duration and cost.
Ruixuan Han, Liucheng Liu, Rui Tu, Wei Xiao, Yingying Li, Huailin Li, Dan Shao
Nuclear Technology | Volume 195 | Number 2 | August 2016 | Pages 192-203
Technical Paper | doi.org/10.13182/NT15-109
Articles are hosted by Taylor and Francis Online.
Iodine atom interstitial configurations and diffusion in bulk β-SiC and α-Zr are calculated using first-principles calculations and the nudged elastic band method. The formation energy of an I interstitial in bulk silicon carbide (SiC) is ten times higher than that of an I interstitial in bulk Zr. The I interstitial is very difficult to introduce into bulk SiC compared with the doping process in bulk Zr. The diffusion mechanisms of an I atom in SiC and Zr are exchange mechanisms. Iodine interstitial diffusion in bulk SiC is roughly an isotropic process along a path that is a series of combinations of ISi → Ic and Ic → ISi, with a diffusion barrier of 1.20 eV and an attempt-to-diffuse frequency Γ0 25.12 THz. Meanwhile, I interstitial diffusion in bulk Zr is an anisotropic process. An I interstitial atom diffuses mainly between two Zr atom [0001] layers along a zigzag path with a diffusion barrier of 0.16 eV and an attempt-to-diffuse frequency Γ0 = 2.88 THz. In general, the diffusion rate of an I interstitial in bulk SiC is lower than that in bulk Zr in the temperature range from 290 to 3000 K. The defect effect on I diffusion is an interesting topic for future study.