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Nuclear Nonproliferation Policy
The mission of the Nuclear Nonproliferation Policy Division (NNPD) is to promote the peaceful use of nuclear technology while simultaneously preventing the diversion and misuse of nuclear material and technology through appropriate safeguards and security, and promotion of nuclear nonproliferation policies. To achieve this mission, the objectives of the NNPD are to: Promote policy that discourages the proliferation of nuclear technology and material to inappropriate entities. Provide information to ANS members, the technical community at large, opinion leaders, and decision makers to improve their understanding of nuclear nonproliferation issues. Become a recognized technical resource on nuclear nonproliferation, safeguards, and security issues. Serve as the integration and coordination body for nuclear nonproliferation activities for the ANS. Work cooperatively with other ANS divisions to achieve these objective nonproliferation policies.
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2025 ANS Annual Conference
June 15–18, 2025
Chicago, IL|Chicago Marriott Downtown
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The Standards Committee is responsible for the development and maintenance of voluntary consensus standards that address the design, analysis, and operation of components, systems, and facilities related to the application of nuclear science and technology. Find out What’s New, check out the Standards Store, or Get Involved today!
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ANS announces 2025 Presidential Citations
One of the privileges of being president of the American Nuclear Society is awarding Presidential Citations to individuals who have demonstrated outstanding effort in some manner for the benefit of ANS or the nuclear community at large. Citations are conferred twice each year, at the Annual and Winter Meetings.
ANS President Lisa Marshall has named this season’s recipients, who will receive recognition at the upcoming Annual Conference in Chicago during the Special Session on Tuesday, June 17.
Ruixuan Han, Liucheng Liu, Rui Tu, Wei Xiao, Yingying Li, Huailin Li, Dan Shao
Nuclear Technology | Volume 195 | Number 2 | August 2016 | Pages 192-203
Technical Paper | doi.org/10.13182/NT15-109
Articles are hosted by Taylor and Francis Online.
Iodine atom interstitial configurations and diffusion in bulk β-SiC and α-Zr are calculated using first-principles calculations and the nudged elastic band method. The formation energy of an I interstitial in bulk silicon carbide (SiC) is ten times higher than that of an I interstitial in bulk Zr. The I interstitial is very difficult to introduce into bulk SiC compared with the doping process in bulk Zr. The diffusion mechanisms of an I atom in SiC and Zr are exchange mechanisms. Iodine interstitial diffusion in bulk SiC is roughly an isotropic process along a path that is a series of combinations of ISi → Ic and Ic → ISi, with a diffusion barrier of 1.20 eV and an attempt-to-diffuse frequency Γ0 25.12 THz. Meanwhile, I interstitial diffusion in bulk Zr is an anisotropic process. An I interstitial atom diffuses mainly between two Zr atom [0001] layers along a zigzag path with a diffusion barrier of 0.16 eV and an attempt-to-diffuse frequency Γ0 = 2.88 THz. In general, the diffusion rate of an I interstitial in bulk SiC is lower than that in bulk Zr in the temperature range from 290 to 3000 K. The defect effect on I diffusion is an interesting topic for future study.