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Accelerator Applications
The division was organized to promote the advancement of knowledge of the use of particle accelerator technologies for nuclear and other applications. It focuses on production of neutrons and other particles, utilization of these particles for scientific or industrial purposes, such as the production or destruction of radionuclides significant to energy, medicine, defense or other endeavors, as well as imaging and diagnostics.
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2024 ANS Annual Conference
June 16–19, 2024
Las Vegas, NV|Mandalay Bay Resort and Casino
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The Standards Committee is responsible for the development and maintenance of voluntary consensus standards that address the design, analysis, and operation of components, systems, and facilities related to the application of nuclear science and technology. Find out What’s New, check out the Standards Store, or Get Involved today!
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NRC approves transfer of Vallecitos to North Star for D&D
By an order dated April 25, the Nuclear Regulatory Commission has approved the transfer of ownership of GE Hitachi Nuclear Energy’s Vallecitos Nuclear Center to NorthStar Group Services for nuclear decontamination, decommissioning, and environmental site restoration.
Behrooz Khorsandi, Jonathan Kulisek, Thomas E. Blue, Don Miller, Jon Baeslack, Steve Stone
Nuclear Technology | Volume 172 | Number 3 | December 2010 | Pages 295-301
Technical Paper | Materials for Nuclear Systems | doi.org/10.13182/NT10-A10938
Articles are hosted by Taylor and Francis Online.
Silicon carbide (SiC) is a promising semiconductor material for use in solid-state radiation detectors. SiC's wide bandgap makes it an appropriate semiconductor for high-temperature applications. Because of the annealing process that occurs at temperatures above 150°C for SiC, SiC semiconductors may function in a radiation environment for longer periods of time at elevated temperatures than at room temperature. Unlike thermal annealing effects that can act to improve the electrical characteristics of SiC, fast neutrons create displacement damage defects in SiC Schottky diodes through scattering and thus rapidly degrade the electrical properties of the SiC diodes.We irradiated SiC Schottky diodes at the Ohio State University Research Reactor at room temperature with neutrons for displacement damage doses (Dd's) ranging from 7.6 × 1010 to 3.8 × 1011 MeV/g. After irradiation, we annealed the diodes, at either 175 or 300°C. We measured the SiC diodes' forward bias resistances at different steps of the experiments. To perform the experiments and study the results meaningfully, we performed a full factorial design of experiments with two factors: Dd and annealing temperature. The Dd factor had five levels of treatment, and the temperature had three levels of treatment. We did one-way and two-way analysis of variance to understand which factor is more dominant and whether or not the interaction effects are significant. It was determined that for Dd up to 2.3 × 1011 MeV/g the fractional damage recovery decreases with increasing Dd, but that Dd is not a significant factor affecting further changes in damage recovery for Dd's ranging from 2.3 × 1011 to 3.8 × 1011 MeV/g when the annealing temperature varies between 175 and 300°C. For high Dd (greater than 2.3 × 1011 MeV/g) neutron irradiations, the annealing temperature significantly affects the damage recovery.