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Division Spotlight
Human Factors, Instrumentation & Controls
Improving task performance, system reliability, system and personnel safety, efficiency, and effectiveness are the division's main objectives. Its major areas of interest include task design, procedures, training, instrument and control layout and placement, stress control, anthropometrics, psychological input, and motivation.
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2024 ANS Annual Conference
June 16–19, 2024
Las Vegas, NV|Mandalay Bay Resort and Casino
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The Standards Committee is responsible for the development and maintenance of voluntary consensus standards that address the design, analysis, and operation of components, systems, and facilities related to the application of nuclear science and technology. Find out What’s New, check out the Standards Store, or Get Involved today!
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Latest News
G7 pledges support for nuclear at Italy meeting
The Group of Seven (G7) recommitted its support for nuclear energy in the countries that opt to use it at a Ministerial Meeting on Climate in Italy last month.
In a statement following the April meeting, the group committed to support multilateral efforts to strengthen the resilience of nuclear supply chains, referencing the goal set by 25 countries during last year’s COP28 climate conference in Dubai to triple global nuclear generating capacity by 2050.
Jincan Zhang, Lei Cao, Min Liu, Bo Liu, Lin Cheng
Nuclear Science and Engineering | Volume 195 | Number 2 | February 2021 | Pages 173-184
Technical Paper | doi.org/10.1080/00295639.2020.1798679
Articles are hosted by Taylor and Francis Online.
The gamma irradiation effect in indium phosphide (InP) heterojunction bipolar transistors (HBTs) is studied in this paper. The direct-current (DC) and alternating-current (AC) characteristics are investigated before and after an irradiation dose of 10 Mrad(Si). The main effects of gamma irradiation for InP HBTs are the following: increase of forward Gummel base current at low bias regime, decrease of common emitter collector current, increase of junction capacitances, and decrease of cutoff frequency. The Keysight model is adopted to describe behaviors of InP HBTs including DC and AC behaviors. The Keysight model parameter values are extracted before and after irradiation, in turn to study the physical mechanisms responsible for irradiation-induced degradation in InP HBTs.