American Nuclear Society

Home / Publications / Journals / Fusion Science and Technology / Volume 38 / Number 3

Deuterium Trapping in Ion-Implanted, Thermally-Grown Oxide Layers and Codeposited Beryllium Oxide

Andrey Markin, Alexander Gorodetsky, Francesco Scaffidi-Argentina, Heinrich Werle, Chung H. Wu, Andrey Zakharov

Fusion Science and Technology / Volume 38 / Number 3 / November 2000 / Pages 363-368

Technical Paper / Special Issue on Beryllium Technology for Fusion /

Deuterium trapping in beryllium oxide films irradiated with 400 eV D ions has been studied by Thermal Desorption Spectroscopy (TDS). It has been found that for thermally grown BeO films implanted in the range 300–900 K the total deuterium retention doesn’t depend on irradiation temperature whereas TDS spectra are temperature dependent. For R.T. implantation the deuterium is released in a wide range from 500 to 1100 K. At implantation above 600 K the main portion of retained deuterium is released in a single peak centered at about 1000 K. The similar TDS peak is measured for D/BeO co-deposited layer. In addition we correlate our implantation data on BeO with the relevant data on beryllium metal and carbon. The interrelations between deuterium retention and microstructure are discussed.

Questions or comments about the site? Contact the ANS Webmaster.