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Study on Deuterium Permeation Through Copper and F82H Low Activation Steel by Ion Implantation

Hirofumi Nakamura, Wataru Shu, Takumi Hayashi, Shigeru OHira, Masataka Nishi, Masayasu Sugisaki

Fusion Science and Technology / Volume 41 / Number 3P2 / May 2002 / Pages 887-891

Material Interaction and Permeation / Proceedings of the Sixth International Conference on Tritium Science and Technology Tsukuba, Japan November 12-16, 2001

Steady state permeation behavior of deuterium implanted into oxide free copper (50 µm thickness, 99.99% purity) and F82H (0.2 mm thickness) was investigated. The rate limiting process of the permeation through copper was determined from the results of the numerical analysis by TMAP code. Based on the numerical analysis, recombination coefficient and diffusion coefficient in the implantation region were derived, and implantation effects on the diffusion coefficient in the implantation region were also discussed. In the F82H experiment, strong effect of low energy deuterium implantation on the deuterium transport in the implantation region was observed.

 
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