Fusion Science and Technology / Volume 52 / Number 4 / November 2007 / Pages 870-874
Technical Paper / First Wall, Blanket, and Shield / dx.doi.org/10.13182/FST07-A1602
He+ implantation effects on the Retention behavior of hydrogen isotopes implanted into 35% oxygen-contained boron film was studied by means of SEM, AFM, XPS and TDS. It was found that the D retention for only D2+ implanted film was the highest and it decreased for pre-He+ implanted film and post-He+ implanted film. From the SEM and AFM images, the surface morphology of the oxygen-contained boron film was partly cracked, indicating that B2O3 was formed in the film. From the TDS and XPS results, the defective structure and the formation of B-D-B bond, B-D bond and B-O-D bond were observed by He+ and D2+ implantation, respectively. It was suggested that oxygen was trapped as B-O bond. The reaction with implanted D2+ was preceded in different mechanism.