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Human Factors, Instrumentation & Controls
Improving task performance, system reliability, system and personnel safety, efficiency, and effectiveness are the division's main objectives. Its major areas of interest include task design, procedures, training, instrument and control layout and placement, stress control, anthropometrics, psychological input, and motivation.
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2024 ANS Annual Conference
June 16–19, 2024
Las Vegas, NV|Mandalay Bay Resort and Casino
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The Standards Committee is responsible for the development and maintenance of voluntary consensus standards that address the design, analysis, and operation of components, systems, and facilities related to the application of nuclear science and technology. Find out What’s New, check out the Standards Store, or Get Involved today!
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February 2024
Latest News
Can hydrogen be the transportation fuel in an otherwise nuclear economy?
Let’s face it: The global economy should be powered primarily by nuclear power. And it probably will by the end of this century, with a still-significant assist from renewables and hydro. Once nuclear systems are dominant, the costs come down to where gas is now; and when carbon emissions are reduced to a small portion of their present state, it will become obvious that most other sources are only good in niche settings. I mean, why use small modular reactors to load-follow when they can just produce that power instead of buffering it?
Tome Kosteski, Nazir P. Kherani, Walter T. Shmayda, Stefan Costea, Stefan Zukotynski
Fusion Science and Technology | Volume 48 | Number 1 | July-August 2005 | Pages 700-703
Technical Paper | Tritium Science and Technology - Properties, Reactions, and Applications | doi.org/10.13182/FST05-A1020
Articles are hosted by Taylor and Francis Online.
p-i-n junction nuclear devices have been made using tritiated amorphous silicon in the intrinsic region. In this unique device, tritium passivates defects and at the same time is an internal source of beta particles. The beta particles traverse the i-layer and through impact ionization, electron-hole pairs are generated. These charges are separated by the built-in field of the p-i-n junction and electrical power is generated. The power from the devices is about 0.2 nW cm-2 in a device of 400 nm thickness. The decay of tritium leads to the formation of dangling bonds and strain related defects in the silicon lattice. These defects lead to a decrease in the effective width of the space charge region and thereby to an increase in the recombination rate of carriers. As a consequence the electric power decreases with time. To overcome this degradation in performance, delta layered devices were made by selectively introducing tritium into the intrinsic region by modulating the tritium gas fraction during film deposition. The electric power from devices with a delta layer have better stability.