Silicon carbide (SiC) monitors provide a means of measuring peak irradiation temperature of static capsules in nuclear irradiation experiments. Neutron irradiation of a SiC monitor causes permanent lattice changes that are removed by annealing to a temperature that exceeds the peak irradiation temperature. The annealing process results in changes to SiC physical characteristics that can be observed during the annealing process. This paper presents preliminary results of a method aimed at using electrical resistance, measured during a two-pass heating – cooling cycle as a means of recovering the irradiation temperature of a SiC monitor. Results indicate that the relationship between resistance and temperature of a SiC monitor shows a significant change in slope when the peak irradiation temperature is reached. This demonstrates the potential for this method to replace the current manual, and lengthy, process of post irradiation examination used to extract the peak irradiation temperature from irradiated SiC monitors.