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North American construction is back—smaller and faster—at OPG’s Darlington
“The nuclear renaissance is real here,” said Ontario Power Generation’s Subo Sinnathamby on May 8, one year to the day after OPG secured a final investment decision to build the first of four planned BWRX-300 reactors at its Darlington nuclear power plant, and shortly after the new reactor’s foundation was lifted into place. “We got our license to construct in April and our [final investment decision] in May, and we’ve been off to the races since.”
S. Agosteo, A. Fazzi, G. D'Angelo, M. V. Introini, A. Pola, C. Pirovano, V. Varoli
Nuclear Technology | Volume 168 | Number 1 | October 2009 | Pages 185-190
Dosimetry | Special Issue on the 11th International Conference on Radiation Shielding and the 15th Topical Meeting of the Radiation Protection and Shielding Division (Part 1) / Radiation Protection | doi.org/10.13182/NT09-A9123
Articles are hosted by Taylor and Francis Online.
An array of micrometric diodes coupled to a residual energy measurement stage was proposed for solid-state microdosimetry. Each diode has a sensitive volume of a cylindrical shape (9 m in nominal diameter) in order to reproduce that simulated by a cylindrical tissue-equivalent proportional counter (TEPC). The silicon microdosimeter was irradiated coupled to a polyethylene converter with monoenergetic neutrons of several energies. The spectra of the energy imparted to the segmented telescope were corrected for tissue equivalence through an optimized procedure that exploits the information from the residual energy stage. A geometrical correction was also applied. The dose-mean lineal energy values were qualitatively compared with literature data. The silicon microdosimeter was also covered with a tissue-equivalent plastic (A150) and with a nylon converter. The results showed a contribution of heavy recoils (mainly carbon and nitrogen nuclei) generated in the tissue-equivalent plastic lower than that measured by the TEPC, owing to their stopping in the titanium-based dead layer of the silicon device.