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Division Spotlight
Mathematics & Computation
Division members promote the advancement of mathematical and computational methods for solving problems arising in all disciplines encompassed by the Society. They place particular emphasis on numerical techniques for efficient computer applications to aid in the dissemination, integration, and proper use of computer codes, including preparation of computational benchmark and development of standards for computing practices, and to encourage the development on new computer codes and broaden their use.
Meeting Spotlight
Nuclear Energy Conference & Expo (NECX)
September 8–11, 2025
Atlanta, GA|Atlanta Marriott Marquis
Standards Program
The Standards Committee is responsible for the development and maintenance of voluntary consensus standards that address the design, analysis, and operation of components, systems, and facilities related to the application of nuclear science and technology. Find out What’s New, check out the Standards Store, or Get Involved today!
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Latest News
Supreme Court rules against Texas in interim storage case
The Supreme Court voted 6–3 against Texas and a group of landowners today in a case involving the Nuclear Regulatory Commission’s licensing of a consolidated interim storage facility for spent nuclear fuel, reversing a decision by the 5th Circuit Court of Appeals to grant the state and landowners Fasken Land and Minerals (Fasken) standing to challenge the license.
Jincan Zhang, Lei Cao, Min Liu, Bo Liu, Lin Cheng
Nuclear Science and Engineering | Volume 195 | Number 2 | February 2021 | Pages 173-184
Technical Paper | doi.org/10.1080/00295639.2020.1798679
Articles are hosted by Taylor and Francis Online.
The gamma irradiation effect in indium phosphide (InP) heterojunction bipolar transistors (HBTs) is studied in this paper. The direct-current (DC) and alternating-current (AC) characteristics are investigated before and after an irradiation dose of 10 Mrad(Si). The main effects of gamma irradiation for InP HBTs are the following: increase of forward Gummel base current at low bias regime, decrease of common emitter collector current, increase of junction capacitances, and decrease of cutoff frequency. The Keysight model is adopted to describe behaviors of InP HBTs including DC and AC behaviors. The Keysight model parameter values are extracted before and after irradiation, in turn to study the physical mechanisms responsible for irradiation-induced degradation in InP HBTs.
