ANS is committed to advancing, fostering, and promoting the development and application of nuclear sciences and technologies to benefit society.
Explore the many uses for nuclear science and its impact on energy, the environment, healthcare, food, and more.
Explore membership for yourself or for your organization.
Conference Spotlight
2026 Annual Conference
May 31–June 3, 2026
Denver, CO|Sheraton Denver
Standards Program
The Standards Committee is responsible for the development and maintenance of voluntary consensus standards that address the design, analysis, and operation of components, systems, and facilities related to the application of nuclear science and technology. Find out What’s New, check out the Standards Store, or Get Involved today!
Latest Magazine Issues
Nov 2025
Jul 2025
Latest Journal Issues
Nuclear Science and Engineering
December 2025
Nuclear Technology
November 2025
Fusion Science and Technology
Latest News
Mike Kramer: Navigating power deals in the new data economy
Mike Kramer has a background in finance, not engineering, but a combined 20 years at Exelon and Constellation and a key role in the deals that have Meta and Microsoft buying power from Constellation’s Clinton and Crane sites have made him something of a nuclear expert.
Kramer spoke with Nuclear News staff writer Susan Gallier in late August, just after a visit to Clinton in central Illinois to celebrate a power purchase agreement (PPA) with Meta that closed in June. As Constellation’s vice president for data economy strategy, Kramer was part of the deal-making—not just the celebration.
Jincan Zhang, Lei Cao, Min Liu, Bo Liu, Lin Cheng
Nuclear Science and Engineering | Volume 195 | Number 2 | February 2021 | Pages 173-184
Technical Paper | doi.org/10.1080/00295639.2020.1798679
Articles are hosted by Taylor and Francis Online.
The gamma irradiation effect in indium phosphide (InP) heterojunction bipolar transistors (HBTs) is studied in this paper. The direct-current (DC) and alternating-current (AC) characteristics are investigated before and after an irradiation dose of 10 Mrad(Si). The main effects of gamma irradiation for InP HBTs are the following: increase of forward Gummel base current at low bias regime, decrease of common emitter collector current, increase of junction capacitances, and decrease of cutoff frequency. The Keysight model is adopted to describe behaviors of InP HBTs including DC and AC behaviors. The Keysight model parameter values are extracted before and after irradiation, in turn to study the physical mechanisms responsible for irradiation-induced degradation in InP HBTs.
