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Why should safeguards by design be a global effort?
Jeremy Whitlock
I can’t think of a more exciting time to be working in nuclear, with the diversity of advanced reactor development and increasing global support for nuclear in sustainable energy planning. But we can’t lose sight of the need to plan for efficient international safeguards at the same time.
Global nuclear deployment has been underpinned since 1970 by the Treaty on the Non-Proliferation of Nuclear Weapons (NPT), making it a key customer requirement for governments to demonstrate unequivocally that the technology is not being misused for weapons development.
The International Atomic Energy Agency (IAEA) has helped verify this commitment for more than 50 years, but it has never safeguarded many of the advanced reactors (and related fuel cycle processes) being developed today.
Jincan Zhang, Lei Cao, Min Liu, Bo Liu, Lin Cheng
Nuclear Science and Engineering | Volume 195 | Number 2 | February 2021 | Pages 173-184
Technical Paper | doi.org/10.1080/00295639.2020.1798679
Articles are hosted by Taylor and Francis Online.
The gamma irradiation effect in indium phosphide (InP) heterojunction bipolar transistors (HBTs) is studied in this paper. The direct-current (DC) and alternating-current (AC) characteristics are investigated before and after an irradiation dose of 10 Mrad(Si). The main effects of gamma irradiation for InP HBTs are the following: increase of forward Gummel base current at low bias regime, decrease of common emitter collector current, increase of junction capacitances, and decrease of cutoff frequency. The Keysight model is adopted to describe behaviors of InP HBTs including DC and AC behaviors. The Keysight model parameter values are extracted before and after irradiation, in turn to study the physical mechanisms responsible for irradiation-induced degradation in InP HBTs.