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Conference Spotlight
2026 Annual Conference
May 31–June 3, 2026
Denver, CO|Sheraton Denver
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The Standards Committee is responsible for the development and maintenance of voluntary consensus standards that address the design, analysis, and operation of components, systems, and facilities related to the application of nuclear science and technology. Find out What’s New, check out the Standards Store, or Get Involved today!
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Latest News
What’s the most difficult question you’ve been asked as a maintenance instructor?
Blye Widmar
"Where are the prints?!"
This was the final question in an onslaught of verbal feedback, comments, and critiques I received from my students back in 2019. I had two years of instructor experience and was teaching a class that had been meticulously rehearsed in preparation for an accreditation visit. I knew the training material well and transferred that knowledge effectively enough for all the students to pass the class. As we wrapped up, I asked the students how they felt about my first big system-level class, and they did not hold back.
“Why was the exam from memory when we don’t work from memory in the plant?” “Why didn’t we refer to the vendor documents?” “Why didn’t we practice more on the mock-up?” And so on.
Jincan Zhang, Lei Cao, Min Liu, Bo Liu, Lin Cheng
Nuclear Science and Engineering | Volume 195 | Number 2 | February 2021 | Pages 173-184
Technical Paper | doi.org/10.1080/00295639.2020.1798679
Articles are hosted by Taylor and Francis Online.
The gamma irradiation effect in indium phosphide (InP) heterojunction bipolar transistors (HBTs) is studied in this paper. The direct-current (DC) and alternating-current (AC) characteristics are investigated before and after an irradiation dose of 10 Mrad(Si). The main effects of gamma irradiation for InP HBTs are the following: increase of forward Gummel base current at low bias regime, decrease of common emitter collector current, increase of junction capacitances, and decrease of cutoff frequency. The Keysight model is adopted to describe behaviors of InP HBTs including DC and AC behaviors. The Keysight model parameter values are extracted before and after irradiation, in turn to study the physical mechanisms responsible for irradiation-induced degradation in InP HBTs.
