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Division Spotlight
Nuclear Criticality Safety
NCSD provides communication among nuclear criticality safety professionals through the development of standards, the evolution of training methods and materials, the presentation of technical data and procedures, and the creation of specialty publications. In these ways, the division furthers the exchange of technical information on nuclear criticality safety with the ultimate goal of promoting the safe handling of fissionable materials outside reactors.
Meeting Spotlight
2025 ANS Annual Conference
June 15–18, 2025
Chicago, IL|Chicago Marriott Downtown
Standards Program
The Standards Committee is responsible for the development and maintenance of voluntary consensus standards that address the design, analysis, and operation of components, systems, and facilities related to the application of nuclear science and technology. Find out What’s New, check out the Standards Store, or Get Involved today!
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Latest News
BREAKING NEWS: Trump issues executive orders to overhaul nuclear industry
The Trump administration issued four executive orders today aimed at boosting domestic nuclear deployment ahead of significant growth in projected energy demand in the coming decades.
During a live signing in the Oval Office, President Donald Trump called nuclear “a hot industry,” adding, “It’s a brilliant industry. [But] you’ve got to do it right. It’s become very safe and environmental.”
Jincan Zhang, Lei Cao, Min Liu, Bo Liu, Lin Cheng
Nuclear Science and Engineering | Volume 195 | Number 2 | February 2021 | Pages 173-184
Technical Paper | doi.org/10.1080/00295639.2020.1798679
Articles are hosted by Taylor and Francis Online.
The gamma irradiation effect in indium phosphide (InP) heterojunction bipolar transistors (HBTs) is studied in this paper. The direct-current (DC) and alternating-current (AC) characteristics are investigated before and after an irradiation dose of 10 Mrad(Si). The main effects of gamma irradiation for InP HBTs are the following: increase of forward Gummel base current at low bias regime, decrease of common emitter collector current, increase of junction capacitances, and decrease of cutoff frequency. The Keysight model is adopted to describe behaviors of InP HBTs including DC and AC behaviors. The Keysight model parameter values are extracted before and after irradiation, in turn to study the physical mechanisms responsible for irradiation-induced degradation in InP HBTs.
