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Division Spotlight
Nuclear Nonproliferation Policy
The mission of the Nuclear Nonproliferation Policy Division (NNPD) is to promote the peaceful use of nuclear technology while simultaneously preventing the diversion and misuse of nuclear material and technology through appropriate safeguards and security, and promotion of nuclear nonproliferation policies. To achieve this mission, the objectives of the NNPD are to: Promote policy that discourages the proliferation of nuclear technology and material to inappropriate entities. Provide information to ANS members, the technical community at large, opinion leaders, and decision makers to improve their understanding of nuclear nonproliferation issues. Become a recognized technical resource on nuclear nonproliferation, safeguards, and security issues. Serve as the integration and coordination body for nuclear nonproliferation activities for the ANS. Work cooperatively with other ANS divisions to achieve these objective nonproliferation policies.
Meeting Spotlight
International Conference on Mathematics and Computational Methods Applied to Nuclear Science and Engineering (M&C 2025)
April 27–30, 2025
Denver, CO|The Westin Denver Downtown
Standards Program
The Standards Committee is responsible for the development and maintenance of voluntary consensus standards that address the design, analysis, and operation of components, systems, and facilities related to the application of nuclear science and technology. Find out What’s New, check out the Standards Store, or Get Involved today!
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Latest News
EnergySolutions to help explore advanced reactor development in Utah
Utah-based waste management company EnergySolutions announced that it has signed a memorandum of understating with the Intermountain Power Agency and the state of Utah to explore the development of advanced nuclear power generation at the Intermountain Power Project (IPP) site near Delta, Utah.
Jincan Zhang, Lei Cao, Min Liu, Bo Liu, Lin Cheng
Nuclear Science and Engineering | Volume 195 | Number 2 | February 2021 | Pages 173-184
Technical Paper | doi.org/10.1080/00295639.2020.1798679
Articles are hosted by Taylor and Francis Online.
The gamma irradiation effect in indium phosphide (InP) heterojunction bipolar transistors (HBTs) is studied in this paper. The direct-current (DC) and alternating-current (AC) characteristics are investigated before and after an irradiation dose of 10 Mrad(Si). The main effects of gamma irradiation for InP HBTs are the following: increase of forward Gummel base current at low bias regime, decrease of common emitter collector current, increase of junction capacitances, and decrease of cutoff frequency. The Keysight model is adopted to describe behaviors of InP HBTs including DC and AC behaviors. The Keysight model parameter values are extracted before and after irradiation, in turn to study the physical mechanisms responsible for irradiation-induced degradation in InP HBTs.
