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Division Spotlight
Mathematics & Computation
Division members promote the advancement of mathematical and computational methods for solving problems arising in all disciplines encompassed by the Society. They place particular emphasis on numerical techniques for efficient computer applications to aid in the dissemination, integration, and proper use of computer codes, including preparation of computational benchmark and development of standards for computing practices, and to encourage the development on new computer codes and broaden their use.
Meeting Spotlight
2025 ANS Annual Conference
June 15–18, 2025
Chicago, IL|Chicago Marriott Downtown
Standards Program
The Standards Committee is responsible for the development and maintenance of voluntary consensus standards that address the design, analysis, and operation of components, systems, and facilities related to the application of nuclear science and technology. Find out What’s New, check out the Standards Store, or Get Involved today!
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ANS announces 2025 Presidential Citations
One of the privileges of being president of the American Nuclear Society is awarding Presidential Citations to individuals who have demonstrated outstanding effort in some manner for the benefit of ANS or the nuclear community at large. Citations are conferred twice each year, at the Annual and Winter Meetings.
ANS President Lisa Marshall has named this season’s recipients, who will receive recognition at the upcoming Annual Conference in Chicago during the Special Session on Tuesday, June 17.
Mirco Karl Grosse (KIT), Teun van Duijnhoven (KIT/FONTYS Univ of Applied Sciences), Martin Steinbrueck, Chongchong Tang, Sarfraz Ahmed, Uta Gerhards, Ingo Juergen Markel, Hans Juergen Seifert (KIT)
Proceedings | 2018 International Congress on Advances in Nuclear Power Plants (ICAPP 2018) | Charlotte, NC, April 8-11, 2018 | Pages 590-597
Stacked couples of silicon carbide and Zircaloy-4 discs were annealed for 1 h in nominal inert atmosphere (6N Ar) at temperatures of 1200, 1400, 1500, 1550, 1575 and 1600°C. Strong interactions between silicon carbide and Zircaloy-4 occurred at temperatures of 1500°C and above. The width of the influenced zone exceeds 1 mm at 1550°C. A pronounced layer structure was found consisting of Zr-Si intermetallic compounds with different stoichiometry, the Zr-Sn intermetallic phase Zr2Sn and sub-stoichiometric ZrC1-x. The six different layers formed at temperatures of 1500°C and above contain these phases in diverse concentrations. At temperatures of 1575 and 1600°C, the discs welded together. This paper gives a detailed description of the results of the post-annealing examinations and an analysis of the interaction between the two materials.
