ANS is committed to advancing, fostering, and promoting the development and application of nuclear sciences and technologies to benefit society.
Explore the many uses for nuclear science and its impact on energy, the environment, healthcare, food, and more.
Explore membership for yourself or for your organization.
Conference Spotlight
2026 Annual Conference
May 31–June 3, 2026
Denver, CO|Sheraton Denver
Standards Program
The Standards Committee is responsible for the development and maintenance of voluntary consensus standards that address the design, analysis, and operation of components, systems, and facilities related to the application of nuclear science and technology. Find out What’s New, check out the Standards Store, or Get Involved today!
Latest Magazine Issues
Nov 2025
Jul 2025
Latest Journal Issues
Nuclear Science and Engineering
December 2025
Nuclear Technology
Fusion Science and Technology
November 2025
Latest News
Education and training to support Canadian nuclear workforce development
Along with several other nations, Canada has committed to net-zero emissions by 2050. Part of this plan is tripling nuclear generating capacity. As of 2025, the country has four operating nuclear generating stations with a total of 17 reactors, 16 of which are in the province of Ontario. The Independent Electricity System Operator has recommended that an additional 17,800 MWe of nuclear power be added to Ontario’s grid.
Chuanfeng Xiang, Haijun Li, Shanxue Xi, Yiyun Zhang, Chunzhi Zhou, Shanqiang Wang, Tao Sun, Xiaoyan Yi, Junxi Wang, Jinmin Li
Nuclear Technology | Volume 211 | Number 7 | July 2025 | Pages 1438-1447
Research Article | doi.org/10.1080/00295450.2024.2403887
Articles are hosted by Taylor and Francis Online.
Utilizing Technology Computer Aided Design (TCAD) software, this study determines the optimal thickness and doping concentration for the intrinsic gallium nitride (GaN) layer in a p-i-n GaN diode to improve detection efficiency and reliability. The study examines energy loss and the transient current response induced by alpha and 3H particles within the GaN p-i-n diode. Additionally, TCAD elucidates the transient current behavior arising from electron-hole pair generation, utilizing the Stopping and Range of Ions in Matter SRIM-2013 linear energy transfer distribution as a guide. The simulations disclose that the tailing effect in the transient current response results from radiation-induced hole accumulation. Elevated applied bias results in increased transient current pulse amplitude, attributed to an extended depletion region that boosts carrier collection. These insights are expected to drive advancements in GaN-based neutron detector technology, essential for advancing nuclear and space science applications in the next generation.