Utilizing Technology Computer Aided Design (TCAD) software, this study determines the optimal thickness and doping concentration for the intrinsic gallium nitride (GaN) layer in a p-i-n GaN diode to improve detection efficiency and reliability. The study examines energy loss and the transient current response induced by alpha and 3H particles within the GaN p-i-n diode. Additionally, TCAD elucidates the transient current behavior arising from electron-hole pair generation, utilizing the Stopping and Range of Ions in Matter SRIM-2013 linear energy transfer distribution as a guide. The simulations disclose that the tailing effect in the transient current response results from radiation-induced hole accumulation. Elevated applied bias results in increased transient current pulse amplitude, attributed to an extended depletion region that boosts carrier collection. These insights are expected to drive advancements in GaN-based neutron detector technology, essential for advancing nuclear and space science applications in the next generation.