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Meeting Spotlight
Nuclear Energy Conference & Expo (NECX)
September 8–11, 2025
Atlanta, GA|Atlanta Marriott Marquis
Standards Program
The Standards Committee is responsible for the development and maintenance of voluntary consensus standards that address the design, analysis, and operation of components, systems, and facilities related to the application of nuclear science and technology. Find out What’s New, check out the Standards Store, or Get Involved today!
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Jun 2025
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Nuclear Science and Engineering
August 2025
Nuclear Technology
Fusion Science and Technology
July 2025
Latest News
The U.S. Million Person Study of Low-Dose-Rate Health Effects
There is a critical knowledge gap regarding the health consequences of exposure to radiation received gradually over time. While there is a plethora of studies on the risks of adverse outcomes from both acute and high-dose exposures, including the landmark study of atomic bomb survivors, these are not characteristic of the chronic exposure to low-dose radiation encountered in occupational and public settings. In addition, smaller cohorts have limited numbers leading to reduced statistical power.
Chuanfeng Xiang, Haijun Li, Shanxue Xi, Yiyun Zhang, Chunzhi Zhou, Shanqiang Wang, Tao Sun, Xiaoyan Yi, Junxi Wang, Jinmin Li
Nuclear Technology | Volume 211 | Number 7 | July 2025 | Pages 1438-1447
Research Article | doi.org/10.1080/00295450.2024.2403887
Articles are hosted by Taylor and Francis Online.
Utilizing Technology Computer Aided Design (TCAD) software, this study determines the optimal thickness and doping concentration for the intrinsic gallium nitride (GaN) layer in a p-i-n GaN diode to improve detection efficiency and reliability. The study examines energy loss and the transient current response induced by alpha and 3H particles within the GaN p-i-n diode. Additionally, TCAD elucidates the transient current behavior arising from electron-hole pair generation, utilizing the Stopping and Range of Ions in Matter SRIM-2013 linear energy transfer distribution as a guide. The simulations disclose that the tailing effect in the transient current response results from radiation-induced hole accumulation. Elevated applied bias results in increased transient current pulse amplitude, attributed to an extended depletion region that boosts carrier collection. These insights are expected to drive advancements in GaN-based neutron detector technology, essential for advancing nuclear and space science applications in the next generation.
