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The division's objectives are to promote the advancement of knowledge and understanding of the fundamental physical phenomena characterizing nuclear reactors and other nuclear systems. The division encourages research and disseminates information through meetings and publications. Areas of technical interest include nuclear data, particle interactions and transport, reactor and nuclear systems analysis, methods, design, validation and operating experience and standards. The Wigner Award heads the awards program.
2020 ANS Virtual Winter Meeting
November 16–19, 2020
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U.S. reactor technologies to be featured at IAEA conference
A virtual side event at the 64th General Conference of the International Atomic Energy Agency will spotlight U.S. reactor technologies. The free event, US Reactor Technologies: Flexible Energy Security for Real-World Challenges, will be held this Thursday, September 24, from 9:00 a.m. to 10:30 a.m. (EDT).
The event will highlight the capabilities of small modular reactors and other innovative reactors for addressing countries’ current needs. It will also examine anticipated challenges in the future, as well as underscore the need to act now.
The event is sponsored by the U.S. Department of Energy’s Office of Nuclear Energy. Advanced registration is required.
J. Vande Pitte, J. Wagemans, A. Gusarov, I. Uytdenhouwen, C. Detavernier, J. Lauwaert
Nuclear Technology | Volume 206 | Number 5 | May 2020 | Pages 758-765
Technical Paper | dx.doi.org/10.1080/00295450.2019.1697172
Articles are hosted by Taylor and Francis Online.
Neutron transmutation doping is used to create high-quality silicon with a specific target resistivity. By implementing neutron absorbers, it is possible to obtain a broader range of postirradiation resistivities. To develop this method, the influence of neutron absorbers on the reactor spectrum in Belgian Reactor 1 was numerically simulated and experimentally verified. A comparison between the modeled reactor spectrum and the spectrum obtained through activation foils showed good agreement. These data were used to calculate the resistivity of silicon under cadmium and hafnium foils with different thicknesses after neutron irradiation. Experimental four-point probe measurements confirmed the calculated resistivities. Hence, the research shows that tailoring the reactor spectrum using neutron absorbers allows for a large range of final resistivities or doping concentrations in silicon during a single irradiation cycle.