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Meeting Spotlight
Nuclear Energy Conference & Expo (NECX)
September 8–11, 2025
Atlanta, GA|Atlanta Marriott Marquis
Standards Program
The Standards Committee is responsible for the development and maintenance of voluntary consensus standards that address the design, analysis, and operation of components, systems, and facilities related to the application of nuclear science and technology. Find out What’s New, check out the Standards Store, or Get Involved today!
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Latest News
The U.S. Million Person Study of Low-Dose-Rate Health Effects
There is a critical knowledge gap regarding the health consequences of exposure to radiation received gradually over time. While there is a plethora of studies on the risks of adverse outcomes from both acute and high-dose exposures, including the landmark study of atomic bomb survivors, these are not characteristic of the chronic exposure to low-dose radiation encountered in occupational and public settings. In addition, smaller cohorts have limited numbers leading to reduced statistical power.
J. Vande Pitte, J. Wagemans, A. Gusarov, I. Uytdenhouwen, C. Detavernier, J. Lauwaert
Nuclear Technology | Volume 206 | Number 5 | May 2020 | Pages 758-765
Technical Paper | doi.org/10.1080/00295450.2019.1697172
Articles are hosted by Taylor and Francis Online.
Neutron transmutation doping is used to create high-quality silicon with a specific target resistivity. By implementing neutron absorbers, it is possible to obtain a broader range of postirradiation resistivities. To develop this method, the influence of neutron absorbers on the reactor spectrum in Belgian Reactor 1 was numerically simulated and experimentally verified. A comparison between the modeled reactor spectrum and the spectrum obtained through activation foils showed good agreement. These data were used to calculate the resistivity of silicon under cadmium and hafnium foils with different thicknesses after neutron irradiation. Experimental four-point probe measurements confirmed the calculated resistivities. Hence, the research shows that tailoring the reactor spectrum using neutron absorbers allows for a large range of final resistivities or doping concentrations in silicon during a single irradiation cycle.