ANS is committed to advancing, fostering, and promoting the development and application of nuclear sciences and technologies to benefit society.
Explore the many uses for nuclear science and its impact on energy, the environment, healthcare, food, and more.
Radiation Protection & Shielding
The Radiation Protection and Shielding Division is developing and promoting radiation protection and shielding aspects of nuclear science and technology — including interaction of nuclear radiation with materials and biological systems, instruments and techniques for the measurement of nuclear radiation fields, and radiation shield design and evaluation.
2020 ANS Virtual Winter Meeting
November 16–19, 2020
The Standards Committee is responsible for the development and maintenance of voluntary consensus standards that address the design, analysis, and operation of components, systems, and facilities related to the application of nuclear science and technology. Find out What’s New, check out the Standards Store, or Get Involved today!
Latest Magazine Issues
Latest Journal Issues
Nuclear Science and Engineering
Fusion Science and Technology
U.S. reactor technologies to be featured at IAEA conference
A virtual side event at the 64th General Conference of the International Atomic Energy Agency will spotlight U.S. reactor technologies. The free event, US Reactor Technologies: Flexible Energy Security for Real-World Challenges, will be held this Thursday, September 24, from 9:00 a.m. to 10:30 a.m. (EDT).
The event will highlight the capabilities of small modular reactors and other innovative reactors for addressing countries’ current needs. It will also examine anticipated challenges in the future, as well as underscore the need to act now.
The event is sponsored by the U.S. Department of Energy’s Office of Nuclear Energy. Advanced registration is required.
Yuan Zhou, Bing Chen, Hongyu He, Bo Li, Xinlin Wang
Nuclear Technology | Volume 206 | Number 1 | January 2020 | Pages 32-39
Technical Paper | dx.doi.org/10.1080/00295450.2019.1613850
Articles are hosted by Taylor and Francis Online.
With large-scale molecular dynamics, we investigate displacement cascades in monocrystalline silicon with regard to the effects of temperature, strain, and primary knock-on atom energy on defect generation and evolution. With temperature increasing, both the thermal spike region and the peak defect count increase, while the effect of temperature on the surviving defect number is negligible. Nevertheless, higher temperature shows negative effect on clustering of vacancy. The effects of uniaxial strain on defect production and clustering is negligible, while its hydrostatic counterpart is evident. With the increment of hydrostatic strain, both the peak and surviving defect count increase (decrease) under tensile (compressive) hydrostatic loading. Meantime, tensile hydrostatic strain will promote defect clustering. More defects and larger defect clusters are produced at higher energy. Otherwise, interstitials are hard to form clusters under different conditions.