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Nuclear Energy Conference & Expo (NECX)
September 8–11, 2025
Atlanta, GA|Atlanta Marriott Marquis
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DOE issues new NEPA rule and procedures—and accelerates DOME reactor testing
Meeting a deadline set in President Trump’s May 23 executive order “Reforming Nuclear Reactor Testing at the Department of Energy,” the DOE on June 30 updated information on its National Environmental Policy Act (NEPA) rulemaking and implementation procedures and published on its website an interim final rule that rescinds existing regulations alongside new implementing procedures.
Ruixuan Han, Liucheng Liu, Rui Tu, Wei Xiao, Yingying Li, Huailin Li, Dan Shao
Nuclear Technology | Volume 195 | Number 2 | August 2016 | Pages 192-203
Technical Paper | doi.org/10.13182/NT15-109
Articles are hosted by Taylor and Francis Online.
Iodine atom interstitial configurations and diffusion in bulk β-SiC and α-Zr are calculated using first-principles calculations and the nudged elastic band method. The formation energy of an I interstitial in bulk silicon carbide (SiC) is ten times higher than that of an I interstitial in bulk Zr. The I interstitial is very difficult to introduce into bulk SiC compared with the doping process in bulk Zr. The diffusion mechanisms of an I atom in SiC and Zr are exchange mechanisms. Iodine interstitial diffusion in bulk SiC is roughly an isotropic process along a path that is a series of combinations of ISi → Ic and Ic → ISi, with a diffusion barrier of 1.20 eV and an attempt-to-diffuse frequency Γ0 25.12 THz. Meanwhile, I interstitial diffusion in bulk Zr is an anisotropic process. An I interstitial atom diffuses mainly between two Zr atom [0001] layers along a zigzag path with a diffusion barrier of 0.16 eV and an attempt-to-diffuse frequency Γ0 = 2.88 THz. In general, the diffusion rate of an I interstitial in bulk SiC is lower than that in bulk Zr in the temperature range from 290 to 3000 K. The defect effect on I diffusion is an interesting topic for future study.