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Decommissioning & Environmental Sciences
The mission of the Decommissioning and Environmental Sciences (DES) Division is to promote the development and use of those skills and technologies associated with the use of nuclear energy and the optimal management and stewardship of the environment, sustainable development, decommissioning, remediation, reutilization, and long-term surveillance and maintenance of nuclear-related installations, and sites. The target audience for this effort is the membership of the Division, the Society, and the public at large.
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Maintaining RIPB in commercial LWRs
The new standard ANSI/ANS-30.3-2022, Light Water Reactor Risk-Informed, Performance-Based Design, has just been issued by the American Nuclear Society. Approved by the American National Standards Institute (ANSI) on July 21, 2022, the standard provides requirements for the incorporation of risk-informed, performance-based (RIPB) principles and methods into the nuclear safety design of commercial light water reactors. The process described in this standard establishes a minimum set of process requirements the designer must follow in order to meet the intent of this standard and appropriately combine deterministic, probabilistic, and performance-based methods during design development.
Behrooz Khorsandi, Jonathan Kulisek, Thomas E. Blue, Don Miller, Jon Baeslack, Steve Stone
Nuclear Technology | Volume 172 | Number 3 | December 2010 | Pages 295-301
Technical Paper | Materials for Nuclear Systems | dx.doi.org/10.13182/NT10-A10938
Articles are hosted by Taylor and Francis Online.
Silicon carbide (SiC) is a promising semiconductor material for use in solid-state radiation detectors. SiC's wide bandgap makes it an appropriate semiconductor for high-temperature applications. Because of the annealing process that occurs at temperatures above 150°C for SiC, SiC semiconductors may function in a radiation environment for longer periods of time at elevated temperatures than at room temperature. Unlike thermal annealing effects that can act to improve the electrical characteristics of SiC, fast neutrons create displacement damage defects in SiC Schottky diodes through scattering and thus rapidly degrade the electrical properties of the SiC diodes.We irradiated SiC Schottky diodes at the Ohio State University Research Reactor at room temperature with neutrons for displacement damage doses (Dd's) ranging from 7.6 × 1010 to 3.8 × 1011 MeV/g. After irradiation, we annealed the diodes, at either 175 or 300°C. We measured the SiC diodes' forward bias resistances at different steps of the experiments. To perform the experiments and study the results meaningfully, we performed a full factorial design of experiments with two factors: Dd and annealing temperature. The Dd factor had five levels of treatment, and the temperature had three levels of treatment. We did one-way and two-way analysis of variance to understand which factor is more dominant and whether or not the interaction effects are significant. It was determined that for Dd up to 2.3 × 1011 MeV/g the fractional damage recovery decreases with increasing Dd, but that Dd is not a significant factor affecting further changes in damage recovery for Dd's ranging from 2.3 × 1011 to 3.8 × 1011 MeV/g when the annealing temperature varies between 175 and 300°C. For high Dd (greater than 2.3 × 1011 MeV/g) neutron irradiations, the annealing temperature significantly affects the damage recovery.