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The mission of the Nuclear Nonproliferation Policy Division (NNPD) is to promote the peaceful use of nuclear technology while simultaneously preventing the diversion and misuse of nuclear material and technology through appropriate safeguards and security, and promotion of nuclear nonproliferation policies. To achieve this mission, the objectives of the NNPD are to: Promote policy that discourages the proliferation of nuclear technology and material to inappropriate entities. Provide information to ANS members, the technical community at large, opinion leaders, and decision makers to improve their understanding of nuclear nonproliferation issues. Become a recognized technical resource on nuclear nonproliferation, safeguards, and security issues. Serve as the integration and coordination body for nuclear nonproliferation activities for the ANS. Work cooperatively with other ANS divisions to achieve these objective nonproliferation policies.
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Framatome signs contracts with Sizewell C
French nuclear developer Framatome is slated to deliver key equipment for Sizewell C Ltd.’s two large reactors planned for the United Kingdom’s Suffolk coast.
The agreement, reportedly worth multiple billions of euros, was announced this week and will involve Framatome from the design phase until commissioning. The company also agreed to a long-term fuel supply deal. Framatome is 80.5 percent owned by France’s EDF and 19.5 percent owned by Mitsubishi Heavy Industries.
Behrooz Khorsandi, Jonathan Kulisek, Thomas E. Blue, Don Miller, Jon Baeslack, Steve Stone
Nuclear Technology | Volume 172 | Number 3 | December 2010 | Pages 295-301
Technical Paper | Materials for Nuclear Systems | doi.org/10.13182/NT10-A10938
Articles are hosted by Taylor and Francis Online.
Silicon carbide (SiC) is a promising semiconductor material for use in solid-state radiation detectors. SiC's wide bandgap makes it an appropriate semiconductor for high-temperature applications. Because of the annealing process that occurs at temperatures above 150°C for SiC, SiC semiconductors may function in a radiation environment for longer periods of time at elevated temperatures than at room temperature. Unlike thermal annealing effects that can act to improve the electrical characteristics of SiC, fast neutrons create displacement damage defects in SiC Schottky diodes through scattering and thus rapidly degrade the electrical properties of the SiC diodes.We irradiated SiC Schottky diodes at the Ohio State University Research Reactor at room temperature with neutrons for displacement damage doses (Dd's) ranging from 7.6 × 1010 to 3.8 × 1011 MeV/g. After irradiation, we annealed the diodes, at either 175 or 300°C. We measured the SiC diodes' forward bias resistances at different steps of the experiments. To perform the experiments and study the results meaningfully, we performed a full factorial design of experiments with two factors: Dd and annealing temperature. The Dd factor had five levels of treatment, and the temperature had three levels of treatment. We did one-way and two-way analysis of variance to understand which factor is more dominant and whether or not the interaction effects are significant. It was determined that for Dd up to 2.3 × 1011 MeV/g the fractional damage recovery decreases with increasing Dd, but that Dd is not a significant factor affecting further changes in damage recovery for Dd's ranging from 2.3 × 1011 to 3.8 × 1011 MeV/g when the annealing temperature varies between 175 and 300°C. For high Dd (greater than 2.3 × 1011 MeV/g) neutron irradiations, the annealing temperature significantly affects the damage recovery.