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Conference Spotlight
2026 ANS Annual Conference
May 31–June 3, 2026
Denver, CO|Sheraton Denver
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The Standards Committee is responsible for the development and maintenance of voluntary consensus standards that address the design, analysis, and operation of components, systems, and facilities related to the application of nuclear science and technology. Find out What’s New, check out the Standards Store, or Get Involved today!
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AI at work: Southern Nuclear’s adoption of Copilot agents drives fleet forward
Southern Nuclear is leading the charge in artificial intelligence integration, with employee-developed applications driving efficiencies in maintenance, operations, safety, and performance.
The tools span all roles within the company, with thousands of documented uses throughout the fleet, including improved maintenance efficiency, risk awareness in maintenance activities, and better-informed decision-making. The data-intensive process of preparing for and executing maintenance operations is streamlined by leveraging AI to put the right information at the fingertips for maintenance leaders, planners, schedulers, engineers, and technicians.
W. L. Filippone, S. P. Monahan, S. Woolf, J. C. Garth
Nuclear Science and Engineering | Volume 105 | Number 1 | May 1990 | Pages 52-58
Technical Paper | doi.org/10.13182/NSE90-A19212
Articles are hosted by Taylor and Francis Online.
The Sn method for solving the Spencer-Lewis equation for electron transport has been extended to treat three-dimensional multiregion problems. The flux continuity condition, which holds when the flux is expressed as a function of path length for single material region problems, is generalized for multiregion problems by reexpressing the flux as a function of energy. Expressing the fluxes in terms of fixed energy increments, independent of material, rather than fixed path length increments, results in a set of Sn/diamond-difference equations that are nearly identical in form to conventional Sn/diamond-difference equations. The Sn method is then applied to calculate electron energy deposition due to 200-keV electron beams incident on problem geometries typical of silicon and gallium-arsenide semiconductor microelectronic devices. The energy deposition results were found to compare well with results of ACCEPT Monte Carlo calculations. Computer run times required for the Sn calculations were found to be lower than that required for Monte Carlo by factors ranging from 30 to 50.
