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Conference Spotlight
Nuclear Energy Conference & Expo (NECX)
September 8–11, 2025
Atlanta, GA|Atlanta Marriott Marquis
Standards Program
The Standards Committee is responsible for the development and maintenance of voluntary consensus standards that address the design, analysis, and operation of components, systems, and facilities related to the application of nuclear science and technology. Find out What’s New, check out the Standards Store, or Get Involved today!
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Powering the future: How the DOE is fueling nuclear fuel cycle research and development
As global interest in nuclear energy surges, the United States must remain at the forefront of research and development to ensure national energy security, advance nuclear technologies, and promote international cooperation on safety and nonproliferation. A crucial step in achieving this is analyzing how funding and resources are allocated to better understand how to direct future research and development. The Department of Energy has spearheaded this effort by funding hundreds of research projects across the country through the Nuclear Energy University Program (NEUP). This initiative has empowered dozens of universities to collaborate toward a nuclear-friendly future.
W. L. Filippone, S. P. Monahan, S. Woolf, J. C. Garth
Nuclear Science and Engineering | Volume 105 | Number 1 | May 1990 | Pages 52-58
Technical Paper | doi.org/10.13182/NSE90-A19212
Articles are hosted by Taylor and Francis Online.
The Sn method for solving the Spencer-Lewis equation for electron transport has been extended to treat three-dimensional multiregion problems. The flux continuity condition, which holds when the flux is expressed as a function of path length for single material region problems, is generalized for multiregion problems by reexpressing the flux as a function of energy. Expressing the fluxes in terms of fixed energy increments, independent of material, rather than fixed path length increments, results in a set of Sn/diamond-difference equations that are nearly identical in form to conventional Sn/diamond-difference equations. The Sn method is then applied to calculate electron energy deposition due to 200-keV electron beams incident on problem geometries typical of silicon and gallium-arsenide semiconductor microelectronic devices. The energy deposition results were found to compare well with results of ACCEPT Monte Carlo calculations. Computer run times required for the Sn calculations were found to be lower than that required for Monte Carlo by factors ranging from 30 to 50.
