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Division Spotlight
Materials Science & Technology
The objectives of MSTD are: promote the advancement of materials science in Nuclear Science Technology; support the multidisciplines which constitute it; encourage research by providing a forum for the presentation, exchange, and documentation of relevant information; promote the interaction and communication among its members; and recognize and reward its members for significant contributions to the field of materials science in nuclear technology.
Meeting Spotlight
Nuclear Energy Conference & Expo (NECX)
September 8–11, 2025
Atlanta, GA|Atlanta Marriott Marquis
Standards Program
The Standards Committee is responsible for the development and maintenance of voluntary consensus standards that address the design, analysis, and operation of components, systems, and facilities related to the application of nuclear science and technology. Find out What’s New, check out the Standards Store, or Get Involved today!
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Latest News
DOE extends Centrus’s HALEU production contract by one year
Centrus Energy has announced that it has secured a contract extension from the Department of Energy to continue—for one year—its ongoing high-assay low-enriched uranium (HALEU) production at the American Centrifuge Plant in Piketon, Ohio, at an annual rate of 900 kilograms of HALEU UF6. According to Centrus, the extension is valued at about $110 million through June 30, 2026.
V. V. Verbinski, C. Cassapakis, R. L. Pease, H. L. Scott
Nuclear Science and Engineering | Volume 70 | Number 1 | April 1979 | Pages 66-72
Technical Paper | doi.org/10.13182/NSE79-A18928
Articles are hosted by Taylor and Francis Online.
The validity of the silicon displacement cross section, D(E), was investigated by simultaneous measurements of neutron spectra (E) and of the accumulated damage D = K induced in 2N2222A transistors. The measured values of (E) were folded in with D(E) to obtain eq, the 1-MeV equivalent fluence for damage to silicon, and the ratios D/eq = K/eq ≡ K were obtained for diverse shapes of (E) to determine the stability of K to (E) variations. The value of K was seen to be constant (within 4 to 5%, 1σ) within roughly the same standard deviation as the D = K measurements for two modified reactor spectra that varied by as much as 1000% above a few MeV when normalized at the 0.2-MeV “threshold” of D(E). This helps substantiate the validity of D(E) in characterizing diverse neutron fields for radiation damage of a practical silicon transistor. Earlier studies with large-volume silicon diodes, for monoenergetic neutrons of 0.7 to 14 MeV, tend to corroborate the D(E) validity for transistors over this energy range. These results attest to the accuracy of the shape in terms of gross structure of D(E), which is governed by the accuracy of the ENDF/B-IV neutron cross-section evaluation used and of the Robinson functional representation of the Lindhard factor for determining the fraction of recoil-atom and charged particle kinetic energy that is available to cause displacements.