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Isotopes & Radiation
Members are devoted to applying nuclear science and engineering technologies involving isotopes, radiation applications, and associated equipment in scientific research, development, and industrial processes. Their interests lie primarily in education, industrial uses, biology, medicine, and health physics. Division committees include Analytical Applications of Isotopes and Radiation, Biology and Medicine, Radiation Applications, Radiation Sources and Detection, and Thermal Power Sources.
2021 ANS Virtual Annual Meeting
June 14–16, 2021
The Standards Committee is responsible for the development and maintenance of voluntary consensus standards that address the design, analysis, and operation of components, systems, and facilities related to the application of nuclear science and technology. Find out What’s New, check out the Standards Store, or Get Involved today!
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Nuclear Science and Engineering
Fusion Science and Technology
Consultant recommends subsidies for Exelon plants
A research and consulting firm hired by Illinois governor J. B. Pritzker’s administration to scrutinize the financial fitness of Exelon’s Byron and Dresden nuclear plants approves of limited state subsidies for the facilities, according to a redacted version of the firm’s report made available yesterday.
Neil B. Morley, Albert Medina, Mohamed A. Abdou
Fusion Science and Technology | Volume 56 | Number 1 | July 2009 | Pages 195-200
Tritium, Safety, and Environment | Eighteenth Topical Meeting on the Technology of Fusion Energy (Part 1) | dx.doi.org/10.13182/FST09-A8901
Articles are hosted by Taylor and Francis Online.
Silicon Carbide (SiC) has been proposed as a possible candidate material for flow channel inserts for the dual coolant blanket concept. Here, the total electrical resistance of disks of high purity CVD SiC were measured with liquid lead-lithium eutectic (LLE) alloy melts serving as electrodes. From this data, the relative contributions of intrinsic resistivity and surface contact resistance as a function of measurement temperature was deduced. It was shown that after a relatively short period of exposure, once wetting at the interface was achieved, that contact resistance at the SiC/LLE interface was not significant. The contact resistance during initial exposure did not behave in a repeatable consistent way and appears to be affected by small variations in sample preparation. For modeling purposes, the electrical properties of an FCI can be based on the intrinsic electrical conductivity of the material and the dimensions. However, longer term operations and effects of impurities still need to be addressed.