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September 8–11, 2025
Atlanta, GA|Atlanta Marriott Marquis
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Fusion Science and Technology
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Latest News
Hash Hashemian: Visionary leadership
As Dr. Hashem M. “Hash” Hashemian prepares to step into his term as President of the American Nuclear Society, he is clear that he wants to make the most of this unique moment.
A groundswell in public approval of nuclear is finding a home in growing governmental support that is backed by a tailwind of technological innovation. “Now is a good time to be in nuclear,” Hashemian said, as he explained the criticality of this moment and what he hoped to accomplish as president.
Young-Woo Kim, Seunghee Han
Fusion Science and Technology | Volume 55 | Number 2 | February 2009 | Pages 209-212
Technical Paper | Seventh International Conference on Open Magnetic Systems for Plasma Confinement | doi.org/10.13182/FST09-A7015
Articles are hosted by Taylor and Francis Online.
Silicon-on-insulator (SOI) structure fabricated by plasma source ion implantation (PSII) with high-power pulsed RF plasma has been studied. Oxygen ions were implanted into p-type silicon wafer and high temperature annealing was subsequently used to form SOI structure. The top silicon and the buried oxide (BOX) layer were formed with 500 ;Aring& and 400 ;Aring&, respectively, in the sample implanted with the dose of 2.5 × 1017 #/cm2 at the ion energy of -75 kV and annealed at 1350 °C for 30 min in Ar+O2 (0.5 %) ambient. This study showed the possibility of SOI fabrication using the PSII with pulsed ICP source.