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Atlanta, GA|Atlanta Marriott Marquis
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DOE issues new NEPA rule and procedures—and accelerates DOME reactor testing
Meeting a deadline set in President Trump’s May 23 executive order “Reforming Nuclear Reactor Testing at the Department of Energy,” the DOE on June 30 updated information on its National Environmental Policy Act (NEPA) rulemaking and implementation procedures and published on its website an interim final rule that rescinds existing regulations alongside new implementing procedures.
J. Kohagura et al.
Fusion Science and Technology | Volume 47 | Number 1 | January 2005 | Pages 303-305
Technical Paper | Open Magnetic Systems for Plasma Confinement | doi.org/10.13182/FST05-A671
Articles are hosted by Taylor and Francis Online.
In order to clarify the effects of fusion-produced neutron irradiation on silicon semiconductor x-ray detectors, the x-ray energy responses of both n- and p-type silicon tomography detectors used in the Joint European Torus (JET) tokamak (n-type) and the GAMMA 10 tandem mirror (p-type) are studied using synchrotron radiation at the Photon Factory of the National Laboratory for High Energy Accelerator Research Organization (KEK). The fusion neutronics source (FNS) of Japan Atomic Energy Research Institute (JAERI) is employed as well-calibrated D-T neutron source with fluences from 1013 to 1015 neutrons/cm2 onto these semiconductor detectors. Different fluence dependence is found between these two types of detectors; that is, (i) for the n-type detector, the recovery of the degraded response is found after the neutron exposure beyond around 1013 neutrons/cm2 onto the detector. A further finding is followed as a "re-degradation" by a neutron irradiation level over about 1014 neutrons/cm2. On the other hand, (ii) the energy response of the p-type detector shows only a gradual decrease with increasing neutron fluences. These properties are interpreted by our proposed theory on semiconductor x-ray responses in terms of the effects of neutrons on the effective doping concentration and the diffusion length of a semiconductor detector.