Boron carbide is an attractive ablator for next-generation inertial confinement fusion (ICF) targets. Here we describe several aspects of our ongoing systematic studies of the deposition and processing of B4C coatings for ICF targets. We show that residual compressive stress in films can be reduced and the deposition rate increased by N-doping. We also demonstrate successful Si substrate etching and surface polishing and discuss remaining challenges and offer potential solutions to the buildup of particulates in the deposition chamber during prolonged coating runs, control of nodular growth defects, and lateral nonuniformity of film properties for deposition conditions with relatively low target-to-substrate distances.