ANS is committed to advancing, fostering, and promoting the development and application of nuclear sciences and technologies to benefit society.
Explore the many uses for nuclear science and its impact on energy, the environment, healthcare, food, and more.
Explore membership for yourself or for your organization.
Conference Spotlight
Nuclear Energy Conference & Expo (NECX)
September 8–11, 2025
Atlanta, GA|Atlanta Marriott Marquis
Standards Program
The Standards Committee is responsible for the development and maintenance of voluntary consensus standards that address the design, analysis, and operation of components, systems, and facilities related to the application of nuclear science and technology. Find out What’s New, check out the Standards Store, or Get Involved today!
Latest Magazine Issues
Jul 2025
Jan 2025
Latest Journal Issues
Nuclear Science and Engineering
August 2025
Nuclear Technology
Fusion Science and Technology
July 2025
Latest News
Hash Hashemian: Visionary leadership
As Dr. Hashem M. “Hash” Hashemian prepares to step into his term as President of the American Nuclear Society, he is clear that he wants to make the most of this unique moment.
A groundswell in public approval of nuclear is finding a home in growing governmental support that is backed by a tailwind of technological innovation. “Now is a good time to be in nuclear,” Hashemian said, as he explained the criticality of this moment and what he hoped to accomplish as president.
Swanee J. Shin, Leonardus B. Bayu Aji, Alison M. Engwall, John H. Bae, Gregory V. Taylor, Paul B. Mirkarimi, Chantel Aracne-Ruddle, Jack Nguyen, Casey W. N. Kong, Sergei O. Kucheyev
Fusion Science and Technology | Volume 79 | Number 7 | October 2023 | Pages 841-852
Research Article | doi.org/10.1080/15361055.2023.2194238
Articles are hosted by Taylor and Francis Online.
Boron carbide is an attractive ablator for next-generation inertial confinement fusion (ICF) targets. Here we describe several aspects of our ongoing systematic studies of the deposition and processing of B4C coatings for ICF targets. We show that residual compressive stress in films can be reduced and the deposition rate increased by N-doping. We also demonstrate successful Si substrate etching and surface polishing and discuss remaining challenges and offer potential solutions to the buildup of particulates in the deposition chamber during prolonged coating runs, control of nodular growth defects, and lateral nonuniformity of film properties for deposition conditions with relatively low target-to-substrate distances.