ANS is committed to advancing, fostering, and promoting the development and application of nuclear sciences and technologies to benefit society.
Explore the many uses for nuclear science and its impact on energy, the environment, healthcare, food, and more.
Explore membership for yourself or for your organization.
Conference Spotlight
2025 ANS Winter Conference & Expo
November 9–12, 2025
Washington, DC|Washington Hilton
Standards Program
The Standards Committee is responsible for the development and maintenance of voluntary consensus standards that address the design, analysis, and operation of components, systems, and facilities related to the application of nuclear science and technology. Find out What’s New, check out the Standards Store, or Get Involved today!
Latest Magazine Issues
Sep 2025
Jan 2025
Latest Journal Issues
Nuclear Science and Engineering
October 2025
Nuclear Technology
September 2025
Fusion Science and Technology
Latest News
NNSA awards BWXT $1.5B defense fuels contract
The Department of Energy’s National Nuclear Security Administration has awarded BWX Technologies a contract valued at $1.5 billion to build a Domestic Uranium Enrichment Centrifuge Experiment (DUECE) pilot plant in Tennessee in support of the administration’s efforts to build out a domestic supply of unobligated enriched uranium for defense-related nuclear fuel.
Swanee J. Shin, Leonardus B. Bayu Aji, Alison M. Engwall, John H. Bae, Gregory V. Taylor, Paul B. Mirkarimi, Chantel Aracne-Ruddle, Jack Nguyen, Casey W. N. Kong, Sergei O. Kucheyev
Fusion Science and Technology | Volume 79 | Number 7 | October 2023 | Pages 841-852
Research Article | doi.org/10.1080/15361055.2023.2194238
Articles are hosted by Taylor and Francis Online.
Boron carbide is an attractive ablator for next-generation inertial confinement fusion (ICF) targets. Here we describe several aspects of our ongoing systematic studies of the deposition and processing of B4C coatings for ICF targets. We show that residual compressive stress in films can be reduced and the deposition rate increased by N-doping. We also demonstrate successful Si substrate etching and surface polishing and discuss remaining challenges and offer potential solutions to the buildup of particulates in the deposition chamber during prolonged coating runs, control of nodular growth defects, and lateral nonuniformity of film properties for deposition conditions with relatively low target-to-substrate distances.