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Antares achieves zero-power criticality at INL
Leveraging more than $140 million in private capital fundraising, over 322,000 square feet of operational manufacturing space, and multifaceted partnerships with the Departments of Energy and Defense, reactor start-up Antares has become the first company involved in the Reactor Pilot Program to achieve zero-power fueled criticality—a full month ahead of the July 4 deadline set by President Trump’s Executive Order 14301.
This milestone, announced yesterday, was achieved with the company’s Mark-0: a sodium heat-pipe-cooled, TRISO-fueled microreactor. The Mark-0 is a forerunner to the company’s flagship design, which it calls the R1. For Antares, this development represents a key validation of its reactor physics, control systems, and supply chain.
Abdelaziz Bouchikhi
Fusion Science and Technology | Volume 79 | Number 2 | February 2023 | Pages 168-178
Technical Paper | doi.org/10.1080/15361055.2022.2136924
Articles are hosted by Taylor and Francis Online.
A detailed study on the capacitively coupled radio-frequency (CCRF) argon discharge with metastable atom density and the effect pressure has been undertaken. Specifically, dielectric layers of borosilicate glass and alumina were introduced to the discharge to examine their influence on the discharge characteristics and to study the properties of the plasma. A model for the argon plasma based on the three moments of the Boltzmann equation together with the Poisson equation was used. The properties of the argon plasma presented are based on the averaged cycle, especially the electron temperature, the electric potential, and the metastable atom density. The electron temperature and the metastable atom density decreased in the presence of the dielectric layers, whereas the electric potential had a high value. Sensitivity analysis showed that the surface charge concentrations on the borosilicate glass and alumina dielectrics and the gap voltage increased with the increase of the relative permittivity; the plasma parameters also increased with increasing gap voltage.