The utilization of ICRF heating for mirror devices has developed renewed interest with the major devices now operating. Recent results have shown efficient ion heating, control of the ion distribution function and suppression of instabilities by use of RF power in the ICRF regime. These results as well as the design considerations for reactor concepts such as MARS make ICRF heating important for the mirror program. The ICRF system must meet both the start up requirements for mirror devices as well as providing a source of power for operation at high temperatures. Methods for obtaining the desired results have been under development for the MFTF-B device. With the start up of MFTF-B the mirror applications of ICRF will be operating in the reactor relevant regime of density and temperature.