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Fusion Science and Technology
July 2025
Latest News
DOE on track to deliver high-burnup SNF to Idaho by 2027
The Department of Energy said it anticipated delivering a research cask of high-burnup spent nuclear fuel from Dominion Energy’s North Anna nuclear power plant in Virginia to Idaho National Laboratory by fall 2027. The planned shipment is part of the High Burnup Dry Storage Research Project being conducted by the DOE with the Electric Power Research Institute.
As preparations continue, the DOE said it is working closely with federal agencies as well as tribal and state governments along potential transportation routes to ensure safety, transparency, and readiness every step of the way.
Watch the DOE’s latest video outlining the project here.
Baojun Liu, Nazir P. Kherani, Stefan Zukotynski, Armando B. Antoniazzi, Kevin P. Chen
Fusion Science and Technology | Volume 54 | Number 2 | August 2008 | Pages 627-630
Technical Paper | Process Applications | doi.org/10.13182/FST08-A1893
Articles are hosted by Taylor and Francis Online.
We report on a simple and versatile method for the integration of tritium in semiconductor materials. A variety of semiconductor materials are exposed to tritium (T2) gas at pressures of up to 120 bar and temperatures of up to 250 °C. Tritiated materials include hydrogenated amorphous silicon (a-Si:H), crystalline silicon (c-Si), silica and carbon nanotubes (CNT). Deep ultra-violet laser irradiation was used to lock tritium in silica films. Effusion measurements show the presence of stable tritium in silicon, silica and CNTs up to 400 °C. IR absorption spectra show a Si-T stretching mode at 1200 cm-1 indicating the formation of stable Si-T bonds in a-Si:H. SIMS measurements show that the penetration depth of tritium in a-Si:H and c-Si is 150 and 10 nm, respectively; the concentration of tritium locked in a-Si:H and c-Si is 20 and 4 at.%, respectively. In tritiated silica, 248-nm UV laser irradiation locks the permeated tritium at stable chemical bonding sites in the silica lattice. Thermal effusion measurement shows that 0.5 wt.% tritium can be stably immobilized in CNTs. The application of tritiated silicon as a cold electron source is demonstrated.