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Nuclear Energy Conference & Expo (NECX)
September 8–11, 2025
Atlanta, GA|Atlanta Marriott Marquis
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Latest News
INL makes a case for eliminating ALARA and setting higher dose limits
A report just released by Idaho National Laboratory reviews decades of radiation protection standards and research on the health effects of low-dose radiation and recommends that the current U.S. annual occupational dose limit of 5,000 mrem be maintained without applying ALARA—the “as low as reasonably achievable” regulatory concept first introduced in 1971—below that threshold.
Noting that epidemiological studies “have consistently failed to demonstrate statistically significant health effects at doses below 10,000 mrem delivered at low dose rates,” the report also recommends “future consideration of increasing this limit to 10,000 mrem/year with appropriate cumulative-dose constraints.”
T. Muroga, D. Zhang, T. Tanaka
Fusion Science and Technology | Volume 64 | Number 2 | August 2013 | Pages 211-215
Materials Development | Proceedings of the Twentieth Topical Meeting on the Technology of Fusion Energy (TOFE-2012) (Part 1), Nashville, Tennessee, August 27-31, 2012 | doi.org/10.13182/FST13-A18078
Articles are hosted by Taylor and Francis Online.
Previous studies by the authors showed that hydrogen permeation reduction factor (PRF) of Er2O3 coating on ferritic steels by Metal Organic Decomposition (MOD) depends on the Cr level of the substrate steels and the annealing conditions. The reason of the dependence was attributed to the composition of the oxide layer formed beneath the coating. The PRF was shown to be larger when Cr2O3 layer was formed than when Fe2O3 layer was formed. This paper reports further investigation of the effect of temperature and oxygen partial pressure of the annealing on the composition of the oxide layer. A diffusion modeling of Cr and O was performed to account for the experimental data. The results showed that the data can be well explained assuming that Cr2O3 layer is formed when supply of Cr exceeds that of O at the substrate surface.
