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The Education, Training & Workforce Development Division provides communication among the academic, industrial, and governmental communities through the exchange of views and information on matters related to education, training and workforce development in nuclear and radiological science, engineering, and technology. Industry leaders, education and training professionals, and interested students work together through Society-sponsored meetings and publications, to enrich their professional development, to educate the general public, and to advance nuclear and radiological science and engineering.
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April 8–10, 2021
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Nuclear Science and Engineering
Fusion Science and Technology
Fukiushima Daiichi: 10 years on
The Fukushima Daiichi site before the accident. All images are provided courtesy of TEPCO unless noted otherwise.
It was a rather normal day back on March 11, 2011, at the Fukushima Daiichi nuclear plant before 2:45 p.m. That was the time when the Great Tohoku Earthquake struck, followed by a massive tsunami that caused three reactor meltdowns and forever changed the nuclear power industry in Japan and worldwide. Now, 10 years later, much has been learned and done to improve nuclear safety, and despite many challenges, significant progress is being made to decontaminate and defuel the extensively damaged Fukushima Daiichi reactor site. This is a summary of what happened, progress to date, current situation, and the outlook for the future there.
David R. Boris, Zhenqiang Ma, Hao-Chih Yuan, Robert P. Ashley, John F. Santarius, Gerald L. Kulcinski, Clayton Dickerson, Todd Allen
Fusion Science and Technology | Volume 52 | Number 4 | November 2007 | Pages 1066-1069
Technical Paper | Plasma Engineering and Diagnostics | dx.doi.org/10.13182/FST07-A1637
Articles are hosted by Taylor and Francis Online.
Using a single junction PIN (p-type, intrinsic, n-type) diode, made of silicon, and doped with boron and phosphorus, high energy protons have been converted to electricity, through ionization from electronic stopping in the silicon, at an efficiency of 0.2%. A simulation of 3.02 MeV D-D protons has been performed, using a 3 MeV linear accelerator. Proton fluxes of ~3 × 1010 protonscm-2×s-1 were incident on a PIN diode with 0.7 cm2 of surface area facing the incident protons. Losses in efficiency as a function of proton fluence are compared with dpa (displacements per atom) rates calculated using the Monte Carlo ion transport code TRIM (Transport and Ranges of Ions in Matter).