ANS is committed to advancing, fostering, and promoting the development and application of nuclear sciences and technologies to benefit society.
Explore the many uses for nuclear science and its impact on energy, the environment, healthcare, food, and more.
Explore membership for yourself or for your organization.
Conference Spotlight
2026 Nuclear Energy Conference & Expo (NECX)
August 24–27, 2026
Dallas, TX|Hilton Anatole
Latest Magazine Issues
Aug 2026
Jan 2026
2026
Latest Journal Issues
Nuclear Science and Engineering
October 2026
Nuclear Technology
September 2026
Fusion Science and Technology
August 2026
Latest News
Second round of Launch Pad selections includes eight newcomers
The National Reactor Innovation Center at Idaho National Laboratory has announced 13 project selections across 12 companies for the Nuclear Energy Launch Pad, a Department of Energy–led program that integrates reactor and fuel facility authorization, testing, and deployment support for private nuclear developers.
The Launch Pad emerged from the Reactor Pilot Program and Fuel Line Pilot Program.
According to INL, projects selected include reactor development and nuclear fuel cycle advancements, including fabrication, enrichment, and conversion technologies.
A. Yoshikawa, Y. Oya, H. Miyauchi, T. Nakahata, Y. Nishikawa, T. Suda, E. Igarashi, M. Oyaidzu, M. Tokitani, H. Iwakiri, N. Yoshida, K. Okuno
Fusion Science and Technology | Volume 52 | Number 4 | November 2007 | Pages 870-874
Technical Paper | First Wall, Blanket, and Shield | doi.org/10.13182/FST07-A1602
Articles are hosted by Taylor and Francis Online.
He+ implantation effects on the Retention behavior of hydrogen isotopes implanted into 35% oxygen-contained boron film was studied by means of SEM, AFM, XPS and TDS. It was found that the D retention for only D2+ implanted film was the highest and it decreased for pre-He+ implanted film and post-He+ implanted film. From the SEM and AFM images, the surface morphology of the oxygen-contained boron film was partly cracked, indicating that B2O3 was formed in the film. From the TDS and XPS results, the defective structure and the formation of B-D-B bond, B-D bond and B-O-D bond were observed by He+ and D2+ implantation, respectively. It was suggested that oxygen was trapped as B-O bond. The reaction with implanted D2+ was preceded in different mechanism.