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Fusion Science and Technology
August 2025
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From operator to entrepreneur: David Garcia applies outage management lessons
David Garcia
If ComEd’s Zion plant in northern Illinois hadn’t closed in 1998, David Garcia might still be there, where he got his start in nuclear power as an operator at age 24.
But in his ninth year working there, Zion closed, and Garcia moved on to a series of new roles—including at Wisconsin’s Point Beach plant, the corporate offices of Minnesota’s Xcel Energy, and on the supplier side at PaR Nuclear—into an on-the-job education that he augmented with degrees in business and divinity that he sought later in life.
Garcia started his own company—Waymaker Resource Group—in 2014. Recently, Waymaker has been supporting Holtec’s restart project at the Palisades plant with staffing and analysis. Palisades sits almost exactly due east of the fully decommissioned Zion site on the other side of Lake Michigan and is poised to operate again after what amounts to an extended outage of more than three years. Holtec also plans to build more reactors at the same site.
For Garcia, the takeaway is clear: “This industry is not going away. Nuclear power and the adjacent industries that support nuclear power—and clean energy, period—are going to be needed for decades upon decades.”
In July, Garcia talked with Nuclear News staff writer Susan Gallier about his career and what he has learned about running successful outages and other projects.
Stefan Costea et al.
Fusion Science and Technology | Volume 48 | Number 1 | July-August 2005 | Pages 712-715
Technical Paper | Tritium Science and Technology - Properties, Reactions, and Applications | doi.org/10.13182/FST05-A1023
Articles are hosted by Taylor and Francis Online.
Hydrogen is known to strongly affect the physical properties of amorphous semiconductors. Indeed hydrogen is introduced during the growth of amorphous silicon films, used in active matrix displays and solar cells, to passivate silicon dangling bonds and to relax the lattice thereby reducing the density of states in the energy gap by several orders of magnitude and giving rise to device grade material. Ideally, hydrogenated amorphous silicon (a-Si:H) is a continuous covalently bonded random network of silicon-silicon and silicon-hydrogen atoms, with the predominant nearest neighbour environment similar to that of crystalline silicon. a-Si:H typically contains about 10 atomic percent hydrogen.Tritium can readily substitute for hydrogen in a-Si:H without altering the physicochemical properties of the material. Tritium decay leads to a change in the local bond structure of the material as helium detaches from bonds leaving behind dangling bonds. The decay rate of tritium and therefore the rate of dangling bond formation is determined by the half-life of tritium. Hence, tritium provides a unique avenue to dynamically study the effect of dangling bonds on the density of states in the energy gap and therefore on the optoelectronic properties of a-Si:H. Tritiated hydrogenated amorphous silicon (a-Si:H:T) was deposited using mixtures of tritium and silane gases in a dc saddle-field glow-discharge deposition system. The amount of tritium in the films was controlled by adjusting the relative flow of tritium and silane gases into the deposition chamber.Photoluminescence, isothermal capacitive transient spectroscopy and constant photocurrent spectroscopy were used to measure defect concentration as a function of time in the films. The defect concentration was found to increase between 1 and 2 orders of magnitude, in about 300 hours. Thermal annealing decreased the defect concentration. It was found that tritium permits a study of the change in the density of defect states due to dangling bond formation in a-Si:H without the uncertainties introduced by the use of multiple samples.
