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Empowering the next generation: ANS’s newest book focuses on careers in nuclear energy
A new career guide for the nuclear energy industry is now available: The Nuclear Empowered Workforce by Earnestine Johnson. Drawing on more than 30 years of experience across 16 nuclear facilities, Johnson offers a practical, insightful look into some of the many career paths available in commercial nuclear power. To mark the release, Johnson sat down with Nuclear News for a wide-ranging conversation about her career, her motivation for writing the book, and her advice for the next generation of nuclear professionals.
When Johnson began her career at engineering services company Stone & Webster, she entered a field still reeling from the effects of the Three Mile Island incident in 1979, nearly 15 years earlier. Her hiring cohort was the first group of new engineering graduates the company had brought on since TMI, a reflection of the industry-wide pause in nuclear construction. Her first long-term assignment—at the Millstone site in Waterford, Conn., helping resolve design issues stemming from TMI—marked the beginning of a long and varied career that spanned positions across the country.
Stefan Costea et al.
Fusion Science and Technology | Volume 48 | Number 1 | July-August 2005 | Pages 712-715
Technical Paper | Tritium Science and Technology - Properties, Reactions, and Applications | doi.org/10.13182/FST05-A1023
Articles are hosted by Taylor and Francis Online.
Hydrogen is known to strongly affect the physical properties of amorphous semiconductors. Indeed hydrogen is introduced during the growth of amorphous silicon films, used in active matrix displays and solar cells, to passivate silicon dangling bonds and to relax the lattice thereby reducing the density of states in the energy gap by several orders of magnitude and giving rise to device grade material. Ideally, hydrogenated amorphous silicon (a-Si:H) is a continuous covalently bonded random network of silicon-silicon and silicon-hydrogen atoms, with the predominant nearest neighbour environment similar to that of crystalline silicon. a-Si:H typically contains about 10 atomic percent hydrogen.Tritium can readily substitute for hydrogen in a-Si:H without altering the physicochemical properties of the material. Tritium decay leads to a change in the local bond structure of the material as helium detaches from bonds leaving behind dangling bonds. The decay rate of tritium and therefore the rate of dangling bond formation is determined by the half-life of tritium. Hence, tritium provides a unique avenue to dynamically study the effect of dangling bonds on the density of states in the energy gap and therefore on the optoelectronic properties of a-Si:H. Tritiated hydrogenated amorphous silicon (a-Si:H:T) was deposited using mixtures of tritium and silane gases in a dc saddle-field glow-discharge deposition system. The amount of tritium in the films was controlled by adjusting the relative flow of tritium and silane gases into the deposition chamber.Photoluminescence, isothermal capacitive transient spectroscopy and constant photocurrent spectroscopy were used to measure defect concentration as a function of time in the films. The defect concentration was found to increase between 1 and 2 orders of magnitude, in about 300 hours. Thermal annealing decreased the defect concentration. It was found that tritium permits a study of the change in the density of defect states due to dangling bond formation in a-Si:H without the uncertainties introduced by the use of multiple samples.
