ANS is committed to advancing, fostering, and promoting the development and application of nuclear sciences and technologies to benefit society.
Explore the many uses for nuclear science and its impact on energy, the environment, healthcare, food, and more.
Division Spotlight
Mathematics & Computation
Division members promote the advancement of mathematical and computational methods for solving problems arising in all disciplines encompassed by the Society. They place particular emphasis on numerical techniques for efficient computer applications to aid in the dissemination, integration, and proper use of computer codes, including preparation of computational benchmark and development of standards for computing practices, and to encourage the development on new computer codes and broaden their use.
Meeting Spotlight
2024 ANS Annual Conference
June 16–19, 2024
Las Vegas, NV|Mandalay Bay Resort and Casino
Standards Program
The Standards Committee is responsible for the development and maintenance of voluntary consensus standards that address the design, analysis, and operation of components, systems, and facilities related to the application of nuclear science and technology. Find out What’s New, check out the Standards Store, or Get Involved today!
Latest Magazine Issues
Apr 2024
Jan 2024
Latest Journal Issues
Nuclear Science and Engineering
May 2024
Nuclear Technology
Fusion Science and Technology
Latest News
College students help develop waste-measuring device at Hanford
A partnership between Washington River Protection Solutions (WRPS) and Washington State University has resulted in the development of a device to measure radioactive and chemical tank waste at the Hanford Site. WRPS is the contractor at Hanford for the Department of Energy’s Office of Environmental Management.
Tome Kosteski, Nazir P. Kherani, Walter T. Shmayda, Stefan Costea, Stefan Zukotynski
Fusion Science and Technology | Volume 48 | Number 1 | July-August 2005 | Pages 700-703
Technical Paper | Tritium Science and Technology - Properties, Reactions, and Applications | doi.org/10.13182/FST05-A1020
Articles are hosted by Taylor and Francis Online.
p-i-n junction nuclear devices have been made using tritiated amorphous silicon in the intrinsic region. In this unique device, tritium passivates defects and at the same time is an internal source of beta particles. The beta particles traverse the i-layer and through impact ionization, electron-hole pairs are generated. These charges are separated by the built-in field of the p-i-n junction and electrical power is generated. The power from the devices is about 0.2 nW cm-2 in a device of 400 nm thickness. The decay of tritium leads to the formation of dangling bonds and strain related defects in the silicon lattice. These defects lead to a decrease in the effective width of the space charge region and thereby to an increase in the recombination rate of carriers. As a consequence the electric power decreases with time. To overcome this degradation in performance, delta layered devices were made by selectively introducing tritium into the intrinsic region by modulating the tritium gas fraction during film deposition. The electric power from devices with a delta layer have better stability.