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Fusion Science and Technology
August 2025
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From operator to entrepreneur: David Garcia applies outage management lessons
David Garcia
If ComEd’s Zion plant in northern Illinois hadn’t closed in 1998, David Garcia might still be there, where he got his start in nuclear power as an operator at age 24.
But in his ninth year working there, Zion closed, and Garcia moved on to a series of new roles—including at Wisconsin’s Point Beach plant, the corporate offices of Minnesota’s Xcel Energy, and on the supplier side at PaR Nuclear—into an on-the-job education that he augmented with degrees in business and divinity that he sought later in life.
Garcia started his own company—Waymaker Resource Group—in 2014. Recently, Waymaker has been supporting Holtec’s restart project at the Palisades plant with staffing and analysis. Palisades sits almost exactly due east of the fully decommissioned Zion site on the other side of Lake Michigan and is poised to operate again after what amounts to an extended outage of more than three years. Holtec also plans to build more reactors at the same site.
For Garcia, the takeaway is clear: “This industry is not going away. Nuclear power and the adjacent industries that support nuclear power—and clean energy, period—are going to be needed for decades upon decades.”
In July, Garcia talked with Nuclear News staff writer Susan Gallier about his career and what he has learned about running successful outages and other projects.
Tome Kosteski, Nazir P. Kherani, Walter T. Shmayda, Stefan Costea, Stefan Zukotynski
Fusion Science and Technology | Volume 48 | Number 1 | July-August 2005 | Pages 700-703
Technical Paper | Tritium Science and Technology - Properties, Reactions, and Applications | doi.org/10.13182/FST05-A1020
Articles are hosted by Taylor and Francis Online.
p-i-n junction nuclear devices have been made using tritiated amorphous silicon in the intrinsic region. In this unique device, tritium passivates defects and at the same time is an internal source of beta particles. The beta particles traverse the i-layer and through impact ionization, electron-hole pairs are generated. These charges are separated by the built-in field of the p-i-n junction and electrical power is generated. The power from the devices is about 0.2 nW cm-2 in a device of 400 nm thickness. The decay of tritium leads to the formation of dangling bonds and strain related defects in the silicon lattice. These defects lead to a decrease in the effective width of the space charge region and thereby to an increase in the recombination rate of carriers. As a consequence the electric power decreases with time. To overcome this degradation in performance, delta layered devices were made by selectively introducing tritium into the intrinsic region by modulating the tritium gas fraction during film deposition. The electric power from devices with a delta layer have better stability.