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IAEA looks at nuclear techniques for crop resilience
The International Atomic Energy Agency has launched a five-year coordinated research project (CRP) to strengthen plant health preparedness using nuclear and related technologies.
Wheat blast, potato late blight, potato bacterial wilt, and cassava witches broom disease can spread quickly across large areas of land, leading to severe yield losses in key crops for food security. Global trade and climate change have increased the likelihood of rapid, transboundary spread.
V. A. Kazakov, A. S. Pokrovsky, A. V. Smirnov
Nuclear Technology | Volume 53 | Number 3 | June 1981 | Pages 392-406
Technical Paper | Nuclear Fuel Cycle Education Module / Material | doi.org/10.13182/NT81-A32648
Articles are hosted by Taylor and Francis Online.
The effect of neutron irradiation on the mechanical properties, structure, and peculiarities of void formation in the Mo-Zr-B alloy within the temperature range from 400 to 1080° C and fluences (1.3 to 11.5) · 1025 n/m2 (>0.1 MeV) has been investigated. The results from radiation studies of poly- and monocrystalline molybdenum, Mo—0.12 Zr—0.16 Ti alloy and of the Mo-Zr-B alloys with different initial thermal treatment have been analyzed. At temperatures of 950 and 1080°C, the voids of nonequiaxial shape are formed, and at 1010°C only planar defects, supposedly thin precipitates, are observed. These results show a minimum swelling of the Mo-Zr-B alloy at 1010°C. It is expected that the peculiarities of void evolution in the Mo-Zr-B alloy are due to the impurity precipitation on void faces. A good correlation of the calculated and experimental values for radiation strengthening of the alloy as a result of voids and dislocation loops within a wide range of their sizes and concentrations was observed. A connection was found between the reduction of the uniform elongation within the temperature range from 400 to 900° C and voidage parameters. A maximum strengthening of the alloy takes place after irradiation at 635°C, which results from a high density of both 1.5-nm-diam voids and the dislocation loops.