ANS is committed to advancing, fostering, and promoting the development and application of nuclear sciences and technologies to benefit society.
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Division Spotlight
Education, Training & Workforce Development
The Education, Training & Workforce Development Division provides communication among the academic, industrial, and governmental communities through the exchange of views and information on matters related to education, training and workforce development in nuclear and radiological science, engineering, and technology. Industry leaders, education and training professionals, and interested students work together through Society-sponsored meetings and publications, to enrich their professional development, to educate the general public, and to advance nuclear and radiological science and engineering.
Meeting Spotlight
2024 ANS Annual Conference
June 16–19, 2024
Las Vegas, NV|Mandalay Bay Resort and Casino
Standards Program
The Standards Committee is responsible for the development and maintenance of voluntary consensus standards that address the design, analysis, and operation of components, systems, and facilities related to the application of nuclear science and technology. Find out What’s New, check out the Standards Store, or Get Involved today!
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Fusion Science and Technology
Latest News
NRC wants input on Hermes 2 test reactor construction permit
The Nuclear Regulatory Commission is seeking input on its draft environmental assessment and draft finding of no significant impact for Kairos Power’s application to build the Hermes 2 test reactor facility in Oak Ridge, Tenn.
Hirofumi Nakamura, Wataru Shu, Takumi Hayashi, Shigeru OHira, Masataka Nishi, Masayasu Sugisaki
Fusion Science and Technology | Volume 41 | Number 3 | May 2002 | Pages 887-891
Material Interaction and Permeation | Proceedings of the Sixth International Conference on Tritium Science and Technology Tsukuba, Japan November 12-16, 2001 | doi.org/10.13182/FST02-A22712
Articles are hosted by Taylor and Francis Online.
Steady state permeation behavior of deuterium implanted into oxide free copper (50 µm thickness, 99.99% purity) and F82H (0.2 mm thickness) was investigated. The rate limiting process of the permeation through copper was determined from the results of the numerical analysis by TMAP code. Based on the numerical analysis, recombination coefficient and diffusion coefficient in the implantation region were derived, and implantation effects on the diffusion coefficient in the implantation region were also discussed. In the F82H experiment, strong effect of low energy deuterium implantation on the deuterium transport in the implantation region was observed.