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Division Spotlight
Isotopes & Radiation
Members are devoted to applying nuclear science and engineering technologies involving isotopes, radiation applications, and associated equipment in scientific research, development, and industrial processes. Their interests lie primarily in education, industrial uses, biology, medicine, and health physics. Division committees include Analytical Applications of Isotopes and Radiation, Biology and Medicine, Radiation Applications, Radiation Sources and Detection, and Thermal Power Sources.
Meeting Spotlight
2024 ANS Annual Conference
June 16–19, 2024
Las Vegas, NV|Mandalay Bay Resort and Casino
Standards Program
The Standards Committee is responsible for the development and maintenance of voluntary consensus standards that address the design, analysis, and operation of components, systems, and facilities related to the application of nuclear science and technology. Find out What’s New, check out the Standards Store, or Get Involved today!
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Latest News
Can hydrogen be the transportation fuel in an otherwise nuclear economy?
Let’s face it: The global economy should be powered primarily by nuclear power. And it probably will by the end of this century, with a still-significant assist from renewables and hydro. Once nuclear systems are dominant, the costs come down to where gas is now; and when carbon emissions are reduced to a small portion of their present state, it will become obvious that most other sources are only good in niche settings. I mean, why use small modular reactors to load-follow when they can just produce that power instead of buffering it?
M. L. Dunzik-Gougar, I. J. van Rooyen, C. M. Hill, T. Trowbridge, J. Madden, J. Burns
Nuclear Technology | Volume 196 | Number 1 | October 2016 | Pages 111-120
Technical Paper | doi.org/10.13182/NT15-129
Articles are hosted by Taylor and Francis Online.
Crystallographic information about layers of silicon carbide (SiC) deposited by chemical vapor deposition is essential to understanding layer performance, especially when the the layers are in nonplanar geometries (e.g., spherical). Electron backscatter diffraction (EBSD) was used to analyze spherical SiC layers using a different sampling approach that applied focused ion beam (FIB) milling to avoid the negative impacts of traditional sample polishing and address the need for very small samples of irradiated materials for analysis. The mechanical and chemical grinding and polishing of sample surfaces can introduce lattice strain and result in the unequal removal of SiC and the surrounding layers of different materials due to the hardness differences among these materials. The nature of layer interfaces is thought to play a key role in the performance of SiC; therefore, the analysis of representative samples at these interfacial areas is crucial. In the work reported herein, a FIB was employed in a novel manner to prepare a more representative sample for EBSD analysis from tristructural-isotropic layers that are free of effects introduced by mechanical and chemical preparation methods. In addition, the difficulty of handling neutron-irradiated microscopic samples (such as those analyzed in this work) has been simplified using pretilted mounting stages. The results showed that while the average grain sizes of samples may be similar, the grain boundary characteristics can differ significantly. Furthermore, low-angle grain boundaries comprised 25% of all boundaries in the FIB-prepared sample compared to only 1% to 2% in the polished sample from the same particle. This study demonstrated that the characterization results from FIB-prepared samples provide more repeatable results due to the elimination of the effects of sample preparation.