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ANS, UCOR sign MOU for workforce development program
The American Nuclear Society and United Cleanup Oak Ridge have signed a memorandum of understanding that establishes a framework for collaboration to advance ANS workforce training and certification programs serving the nuclear industry.
According to the document, UCOR will provide “operational insights and subject matter expertise to inform ANS’s professional development and credentialing offerings, including the Certified Nuclear Professional [CNP] program.” The collaboration will strengthen UCOR’s workforce development efforts while advancing ANS’s mission to sustain and expand the national nuclear workforce pipeline and capabilities.
J. Chin, T. Ohkawa
Nuclear Technology | Volume 32 | Number 2 | February 1977 | Pages 115-124
Technical Paper | Reactor | doi.org/10.13182/NT77-A31717
Articles are hosted by Taylor and Francis Online.
The feasibility of in situ regeneration of a deuterium-tritium (D-T) fusion reactor first wall is explored. Chemical and physical vapor deposition processes are considered for applying low-Z materials and metals. Trial deposits of carbon, SiC, Si3N4, and (Si, Al)N were prepared by one or both of these fabrication techniques. Material properties such as chemical composition, impurity concentration, morphology, and crystal structure thought to be important in first wall performance were found to be controllable by the vapor deposition process conditions. Chemical composition of the gas mixtures, substrate temperature, and deposition pressures were parameters that influenced material properties in all vapor deposition processes. These parameters may be expected to be controllable in a D-T fusion reactor chamber. Temperature can be adjusted within the plasma zone by a glow discharge. The chemical composition of the reactant gases can be controllable by an auxiliary gas supply and exhaust systems. Gas pressure control within the reactor is a required feature of any fusion reactor system. In situ regeneration of the fusion first wall by vapor deposition processes thus appears feasible.