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Antares achieves zero-power criticality at INL
Leveraging more than $140 million in private capital fundraising, over 322,000 square feet of operational manufacturing space, and multifaceted partnerships with the Departments of Energy and Defense, reactor start-up Antares has become the first company involved in the Reactor Pilot Program to achieve zero-power fueled criticality—a full month ahead of the July 4 deadline set by President Trump’s Executive Order 14301.
This milestone, announced yesterday, was achieved with the company’s Mark-0: a sodium heat-pipe-cooled, TRISO-fueled microreactor. The Mark-0 is a forerunner to the company’s flagship design, which it calls the R1. For Antares, this development represents a key validation of its reactor physics, control systems, and supply chain.
Robert J. Schott, Charles L. Weaver, Mark A. Prelas, Kyuhak Oh, Jason B. Rothenberger, R. V. Tompson, Denis A. Wisniewski
Nuclear Technology | Volume 181 | Number 2 | February 2013 | Pages 349-353
Technical Paper | Radioisotopes | doi.org/10.13182/NT13-A15789
Articles are hosted by Taylor and Francis Online.
The use of a photon intermediate direct energy conversion (PIDEC) process to develop a proof of concept of a long-lived and efficient nuclear battery powered by a radioactive beta source is discussed. Fundamentally, PIDEC is a means of matching the scale length of the range of radiation to the scale length of the transducer. The device uses a photovoltaic cell and excimer gas-based photon source. In this work, argon was used to produce the excimer photon source (argon excimer at 129 nm) with a pressure range from 7 × 10-3 to 1.4 × 107 Pa (10-6 to 2100 psig). The beta source used in this study was a 90Sr source that has a daughter, 90Y, that then decays to stable 90Zr. Intermediate shielding from lead and an argon gas plenum were used to prevent damage to the photovoltaic cell. This battery demonstrated power variations with gas pressure as expected, and no radiation damage to the photovoltaic cell was observed over a period in excess of 150 h. Such a long exposure period demonstrates the desired tolerance of the device to the direct radiation damage that would otherwise be sustained in normal semiconductor-based energy conversion systems.