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Growth beyond megawatts
Hash Hashemianpresident@ans.org
When talking about growth in the nuclear sector, there can be a somewhat myopic focus on increasing capacity from year to year. Certainly, we all feel a degree of excitement when new projects are announced, and such announcements are undoubtedly a reflection of growth in the field, but it’s important to keep in mind that growth in nuclear has many metrics and takes many forms.
Nuclear growth—beyond megawatts—also takes the form of increasing international engagement. That engagement looks like newcomer countries building their nuclear sectors for the first time. It also looks like countries with established nuclear sectors deepening their connections and collaborations. This is one of the reasons I have been focused throughout my presidency on bringing more international members and organizations into the fold of the American Nuclear Society.
Praneeth Kandlakunta, Matthew Van Zile, Lei Raymond Cao
Nuclear Science and Engineering | Volume 196 | Number 11 | November 2022 | Pages 1383-1396
Technical Paper | doi.org/10.1080/00295639.2022.2091905
Articles are hosted by Taylor and Francis Online.
The feasibility of using solar cells for post-detonation monitoring, and more broadly, gamma-ray monitoring, is evaluated using Monte Carlo simulations and experiments in this work. We measured the short-circuit current Isc response of commercial silicon (Si) solar cells to 137Cs and 60Co gamma rays. A clear response of both mono- and polycrystalline Si solar cells to 137Cs and 60Co gamma rays was obtained in good agreement with the simulations. Radiation effects in solar cells due to accumulated gamma-ray dose were noticed as the drop in Isc and open-circuit voltage Voc. The atomic displacement cross section of the produced secondary fast electrons and nonionizing energy loss (NIEL) concepts were revisited to understand the principal gamma-radiation damage mechanism in solar cell devices. Analytical computations of and NIEL of electrons convoluted with simulated Compton electron distributions in Si enabled a fundamental understanding of the gamma-radiation effects and recovery mechanism in solar cells, further supporting the experimental results. Different from the ionization effects in the polymer and glass layers of a solar cell/panel, displacement damage in the Si p-n layer from gamma rays or fast electrons is much less than that from massive particles, which directly affects the charge collection performance fundamental to solar cell operation.