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Division Spotlight
Young Members Group
The Young Members Group works to encourage and enable all young professional members to be actively involved in the efforts and endeavors of the Society at all levels (Professional Divisions, ANS Governance, Local Sections, etc.) as they transition from the role of a student to the role of a professional. It sponsors non-technical workshops and meetings that provide professional development and networking opportunities for young professionals, collaborates with other Divisions and Groups in developing technical and non-technical content for topical and national meetings, encourages its members to participate in the activities of the Groups and Divisions that are closely related to their professional interests as well as in their local sections, introduces young members to the rules and governance structure of the Society, and nominates young professionals for awards and leadership opportunities available to members.
Meeting Spotlight
2024 ANS Annual Conference
June 16–19, 2024
Las Vegas, NV|Mandalay Bay Resort and Casino
Standards Program
The Standards Committee is responsible for the development and maintenance of voluntary consensus standards that address the design, analysis, and operation of components, systems, and facilities related to the application of nuclear science and technology. Find out What’s New, check out the Standards Store, or Get Involved today!
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Nicholas Tsoulfanidis—ANS member since 1969
We welcome ANS members who have careered in the community to submit their own Nuclear Legacy stories, so that the personal history of nuclear power can be captured. For information on submitting your stories, contact nucnews@ans.org.
As an undergraduate I studied physics at the University of Athens. I entered the university in 1955 after successfully passing a national exam (came up fourth in a field of about 700 candidates). Upon graduation and finishing my mandatory two-year military service, the plan was to teach physics either in a public high school or as a tutor for a private for-profit institution, preparing high school students for the national exam.
Shu-Huan Liu, Aqil Hussain, Da Li, Xiaoqiang Guo, Zhuo-Qi Li, Olarewaju Mubashiru Lawal, Jiangkun Yang, Wei Chen
Nuclear Science and Engineering | Volume 191 | Number 1 | July 2018 | Pages 98-103
Technical Paper | doi.org/10.1080/00295639.2018.1450004
Articles are hosted by Taylor and Francis Online.
For evaluating the SiGe heterojunction bipolar transistors (HBTs) performance during and after gamma-ray irradiation, the characteristics of the direct current (dc) gain of the test samples changed with increasing irradiation dose, and collector current injection levels during 60Co gamma irradiation were measured and analyzed. The experimental results of the typical dc and alternating current (ac) electronic parameters before and after irradiation revealed that the base current Ib, the collector current IC, the dc current gain, and the maximum oscillation frequency fmax exhibited degradation. While other electronic parameters including the cut-off frequency fT, the ac current gain |H21|, and output capacitance CBC did not exhibit any significant change compared with those of pre-irradiation. The degradation mechanisms of the typical dc and ac parameters measured in this work were primarily analyzed. The tested results of SiGe HBTs offered some reference data for evaluating the behavior of the test type of device operated in an ionizing radiation environment.