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A wave of new U.S.-U.K. deals ahead of Trump’s state visit
President Trump will arrive in the United Kingdom this week for a state visit that promises to include the usual pomp and ceremony alongside the signing of a landmark new agreement on U.S.-U.K. nuclear collaboration.
Young-Woo Kim, Seunghee Han
Fusion Science and Technology | Volume 55 | Number 2 | February 2009 | Pages 209-212
Technical Paper | Seventh International Conference on Open Magnetic Systems for Plasma Confinement | doi.org/10.13182/FST09-A7015
Articles are hosted by Taylor and Francis Online.
Silicon-on-insulator (SOI) structure fabricated by plasma source ion implantation (PSII) with high-power pulsed RF plasma has been studied. Oxygen ions were implanted into p-type silicon wafer and high temperature annealing was subsequently used to form SOI structure. The top silicon and the buried oxide (BOX) layer were formed with 500 ;Aring& and 400 ;Aring&, respectively, in the sample implanted with the dose of 2.5 × 1017 #/cm2 at the ion energy of -75 kV and annealed at 1350 °C for 30 min in Ar+O2 (0.5 %) ambient. This study showed the possibility of SOI fabrication using the PSII with pulsed ICP source.