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From operator to entrepreneur: David Garcia applies outage management lessons
David Garcia
If ComEd’s Zion plant in northern Illinois hadn’t closed in 1998, David Garcia might still be there, where he got his start in nuclear power as an operator at age 24.
But in his ninth year working there, Zion closed, and Garcia moved on to a series of new roles—including at Wisconsin’s Point Beach plant, the corporate offices of Minnesota’s Xcel Energy, and on the supplier side at PaR Nuclear—into an on-the-job education that he augmented with degrees in business and divinity that he sought later in life.
Garcia started his own company—Waymaker Resource Group—in 2014. Recently, Waymaker has been supporting Holtec’s restart project at the Palisades plant with staffing and analysis. Palisades sits almost exactly due east of the fully decommissioned Zion site on the other side of Lake Michigan and is poised to operate again after what amounts to an extended outage of more than three years. Holtec also plans to build more reactors at the same site.
For Garcia, the takeaway is clear: “This industry is not going away. Nuclear power and the adjacent industries that support nuclear power—and clean energy, period—are going to be needed for decades upon decades.”
In July, Garcia talked with Nuclear News staff writer Susan Gallier about his career and what he has learned about running successful outages and other projects.
Young-Woo Kim, Seunghee Han
Fusion Science and Technology | Volume 55 | Number 2 | February 2009 | Pages 209-212
Technical Paper | Seventh International Conference on Open Magnetic Systems for Plasma Confinement | doi.org/10.13182/FST09-A7015
Articles are hosted by Taylor and Francis Online.
Silicon-on-insulator (SOI) structure fabricated by plasma source ion implantation (PSII) with high-power pulsed RF plasma has been studied. Oxygen ions were implanted into p-type silicon wafer and high temperature annealing was subsequently used to form SOI structure. The top silicon and the buried oxide (BOX) layer were formed with 500 ;Aring& and 400 ;Aring&, respectively, in the sample implanted with the dose of 2.5 × 1017 #/cm2 at the ion energy of -75 kV and annealed at 1350 °C for 30 min in Ar+O2 (0.5 %) ambient. This study showed the possibility of SOI fabrication using the PSII with pulsed ICP source.
