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2026 Annual Conference
May 31–June 3, 2026
Denver, CO|Sheraton Denver
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Latest News
What’s the most difficult question you’ve been asked as a maintenance instructor?
Blye Widmar
"Where are the prints?!"
This was the final question in an onslaught of verbal feedback, comments, and critiques I received from my students back in 2019. I had two years of instructor experience and was teaching a class that had been meticulously rehearsed in preparation for an accreditation visit. I knew the training material well and transferred that knowledge effectively enough for all the students to pass the class. As we wrapped up, I asked the students how they felt about my first big system-level class, and they did not hold back.
“Why was the exam from memory when we don’t work from memory in the plant?” “Why didn’t we refer to the vendor documents?” “Why didn’t we practice more on the mock-up?” And so on.
J. Kohagura et al.
Fusion Science and Technology | Volume 47 | Number 1 | January 2005 | Pages 303-305
Technical Paper | Open Magnetic Systems for Plasma Confinement | doi.org/10.13182/FST05-A671
Articles are hosted by Taylor and Francis Online.
In order to clarify the effects of fusion-produced neutron irradiation on silicon semiconductor x-ray detectors, the x-ray energy responses of both n- and p-type silicon tomography detectors used in the Joint European Torus (JET) tokamak (n-type) and the GAMMA 10 tandem mirror (p-type) are studied using synchrotron radiation at the Photon Factory of the National Laboratory for High Energy Accelerator Research Organization (KEK). The fusion neutronics source (FNS) of Japan Atomic Energy Research Institute (JAERI) is employed as well-calibrated D-T neutron source with fluences from 1013 to 1015 neutrons/cm2 onto these semiconductor detectors. Different fluence dependence is found between these two types of detectors; that is, (i) for the n-type detector, the recovery of the degraded response is found after the neutron exposure beyond around 1013 neutrons/cm2 onto the detector. A further finding is followed as a "re-degradation" by a neutron irradiation level over about 1014 neutrons/cm2. On the other hand, (ii) the energy response of the p-type detector shows only a gradual decrease with increasing neutron fluences. These properties are interpreted by our proposed theory on semiconductor x-ray responses in terms of the effects of neutrons on the effective doping concentration and the diffusion length of a semiconductor detector.
