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Smarter waste strategies: Helping deliver on the promise of advanced nuclear
At COP28, held in Dubai in 2023, a clear consensus emerged: Nuclear energy must be a cornerstone of the global clean energy transition. With electricity demand projected to soar as we decarbonize not just power but also industry, transport, and heat, the case for new nuclear is compelling. More than 20 countries committed to tripling global nuclear capacity by 2050. In the United States alone, the Department of Energy forecasts that the country’s current nuclear capacity could more than triple, adding 200 GW of new nuclear to the existing 95 GW by mid-century.
J. Kohagura et al.
Fusion Science and Technology | Volume 47 | Number 1 | January 2005 | Pages 303-305
Technical Paper | Open Magnetic Systems for Plasma Confinement | doi.org/10.13182/FST05-A671
Articles are hosted by Taylor and Francis Online.
In order to clarify the effects of fusion-produced neutron irradiation on silicon semiconductor x-ray detectors, the x-ray energy responses of both n- and p-type silicon tomography detectors used in the Joint European Torus (JET) tokamak (n-type) and the GAMMA 10 tandem mirror (p-type) are studied using synchrotron radiation at the Photon Factory of the National Laboratory for High Energy Accelerator Research Organization (KEK). The fusion neutronics source (FNS) of Japan Atomic Energy Research Institute (JAERI) is employed as well-calibrated D-T neutron source with fluences from 1013 to 1015 neutrons/cm2 onto these semiconductor detectors. Different fluence dependence is found between these two types of detectors; that is, (i) for the n-type detector, the recovery of the degraded response is found after the neutron exposure beyond around 1013 neutrons/cm2 onto the detector. A further finding is followed as a "re-degradation" by a neutron irradiation level over about 1014 neutrons/cm2. On the other hand, (ii) the energy response of the p-type detector shows only a gradual decrease with increasing neutron fluences. These properties are interpreted by our proposed theory on semiconductor x-ray responses in terms of the effects of neutrons on the effective doping concentration and the diffusion length of a semiconductor detector.
