ANS is committed to advancing, fostering, and promoting the development and application of nuclear sciences and technologies to benefit society.
Explore the many uses for nuclear science and its impact on energy, the environment, healthcare, food, and more.
Explore membership for yourself or for your organization.
Conference Spotlight
2026 Nuclear Energy Conference & Expo (NECX)
August 24–27, 2026
Dallas, TX|Hilton Anatole
Latest Magazine Issues
Aug 2026
Jan 2026
2026
Latest Journal Issues
Nuclear Science and Engineering
September 2026
Nuclear Technology
Fusion Science and Technology
August 2026
Latest News
Uranium prices steady as EIA releases annual market report
The end-of-July spot price for uranium was $86.36 per pound, as reported by Cameco—roughly the same as it has been since February. Analytics firm Trading Economics reported a uranium futures price of $86.60 per pound, a figure that also has been holding steady since early April.
These updates come as the U.S. Energy Information Administration has released its 2025 Uranium Marketing Annual Report, which examines in detail multiple aspects of the U.S. uranium market. Data are derived from answers given in the Uranium Marketing Annual Survey, which collects information on contracts, deliveries (during the past year and projected for the next 10 years), purchased enrichment services, inventories, fuel assembly usage, and market requirements.
K. Iguchi, Y. Morimoto, T. Sugiyama, S. Akahori, K. Okuno, H. Nakamura, M. Nishi
Fusion Science and Technology | Volume 39 | Number 2 | March 2001 | Pages 905-909
Divertor and Plasma-Facing Components | doi.org/10.13182/FST01-A11963355
Articles are hosted by Taylor and Francis Online.
Studies on chemical behavior of energetic deuterium implanted into SiC, Si, and graphite were carried out by means of the X-ray photoelectron spectroscopy (XPS) and the thermal desorption spectroscopy (TDS). Two chemical states of implanted deuterium were observed in SiC. It was suggested that the one was contribution of deuterium in interstitial, and the other was contribution of deuterium in defects resulted by deuterium ion (D2+) implantation. From the results for Si, it was found that implanted deuterium existed in Si with three chemical states. The deuterium behavior in graphite was different with that in SiC and in Si. The deuterium chemical behavior in SiC was discussed in comparison with that implanted into Si and graphite.