Studies on chemical behavior of energetic deuterium implanted into SiC, Si, and graphite were carried out by means of the X-ray photoelectron spectroscopy (XPS) and the thermal desorption spectroscopy (TDS). Two chemical states of implanted deuterium were observed in SiC. It was suggested that the one was contribution of deuterium in interstitial, and the other was contribution of deuterium in defects resulted by deuterium ion (D2+) implantation. From the results for Si, it was found that implanted deuterium existed in Si with three chemical states. The deuterium behavior in graphite was different with that in SiC and in Si. The deuterium chemical behavior in SiC was discussed in comparison with that implanted into Si and graphite.