ANS is committed to advancing, fostering, and promoting the development and application of nuclear sciences and technologies to benefit society.
Explore the many uses for nuclear science and its impact on energy, the environment, healthcare, food, and more.
Explore membership for yourself or for your organization.
Conference Spotlight
2026 ANS Annual Conference
May 31–June 3, 2026
Denver, CO|Sheraton Denver
Standards Program
The Standards Committee is responsible for the development and maintenance of voluntary consensus standards that address the design, analysis, and operation of components, systems, and facilities related to the application of nuclear science and technology. Find out What’s New, check out the Standards Store, or Get Involved today!
Latest Magazine Issues
Jan 2026
Jul 2025
Latest Journal Issues
Nuclear Science and Engineering
January 2026
Nuclear Technology
December 2025
Fusion Science and Technology
November 2025
Latest News
DOE signs two more OTAs in Reactor Pilot Program
This week, the Department of Energy has finalized two new other transaction agreements (OTAs) with participating companies in its Reactor Pilot Program, which aims to get one or two fast-tracked reactors on line by July 4 of this year. Those companies are Terrestrial Energy and Oklo.
K. Iguchi, Y. Morimoto, T. Sugiyama, S. Akahori, K. Okuno, H. Nakamura, M. Nishi
Fusion Science and Technology | Volume 39 | Number 2 | March 2001 | Pages 905-909
Divertor and Plasma-Facing Components | doi.org/10.13182/FST01-A11963355
Articles are hosted by Taylor and Francis Online.
Studies on chemical behavior of energetic deuterium implanted into SiC, Si, and graphite were carried out by means of the X-ray photoelectron spectroscopy (XPS) and the thermal desorption spectroscopy (TDS). Two chemical states of implanted deuterium were observed in SiC. It was suggested that the one was contribution of deuterium in interstitial, and the other was contribution of deuterium in defects resulted by deuterium ion (D2+) implantation. From the results for Si, it was found that implanted deuterium existed in Si with three chemical states. The deuterium behavior in graphite was different with that in SiC and in Si. The deuterium chemical behavior in SiC was discussed in comparison with that implanted into Si and graphite.
