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Meeting Spotlight
Nuclear Energy Conference & Expo (NECX)
September 8–11, 2025
Atlanta, GA|Atlanta Marriott Marquis
Standards Program
The Standards Committee is responsible for the development and maintenance of voluntary consensus standards that address the design, analysis, and operation of components, systems, and facilities related to the application of nuclear science and technology. Find out What’s New, check out the Standards Store, or Get Involved today!
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Nuclear Technology
Fusion Science and Technology
July 2025
Latest News
The U.S. Million Person Study of Low-Dose-Rate Health Effects
There is a critical knowledge gap regarding the health consequences of exposure to radiation received gradually over time. While there is a plethora of studies on the risks of adverse outcomes from both acute and high-dose exposures, including the landmark study of atomic bomb survivors, these are not characteristic of the chronic exposure to low-dose radiation encountered in occupational and public settings. In addition, smaller cohorts have limited numbers leading to reduced statistical power.
K. Iguchi, Y. Morimoto, T. Sugiyama, S. Akahori, K. Okuno, H. Nakamura, M. Nishi
Fusion Science and Technology | Volume 39 | Number 2 | March 2001 | Pages 905-909
Divertor and Plasma-Facing Components | doi.org/10.13182/FST01-A11963355
Articles are hosted by Taylor and Francis Online.
Studies on chemical behavior of energetic deuterium implanted into SiC, Si, and graphite were carried out by means of the X-ray photoelectron spectroscopy (XPS) and the thermal desorption spectroscopy (TDS). Two chemical states of implanted deuterium were observed in SiC. It was suggested that the one was contribution of deuterium in interstitial, and the other was contribution of deuterium in defects resulted by deuterium ion (D2+) implantation. From the results for Si, it was found that implanted deuterium existed in Si with three chemical states. The deuterium behavior in graphite was different with that in SiC and in Si. The deuterium chemical behavior in SiC was discussed in comparison with that implanted into Si and graphite.
