ANS is committed to advancing, fostering, and promoting the development and application of nuclear sciences and technologies to benefit society.
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Division Spotlight
Education, Training & Workforce Development
The Education, Training & Workforce Development Division provides communication among the academic, industrial, and governmental communities through the exchange of views and information on matters related to education, training and workforce development in nuclear and radiological science, engineering, and technology. Industry leaders, education and training professionals, and interested students work together through Society-sponsored meetings and publications, to enrich their professional development, to educate the general public, and to advance nuclear and radiological science and engineering.
Meeting Spotlight
2025 ANS Annual Conference
June 15–18, 2025
Chicago, IL|Chicago Marriott Downtown
Standards Program
The Standards Committee is responsible for the development and maintenance of voluntary consensus standards that address the design, analysis, and operation of components, systems, and facilities related to the application of nuclear science and technology. Find out What’s New, check out the Standards Store, or Get Involved today!
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Fusion Science and Technology
Latest News
Zaporizhzhia ‘extremely fragile’ relying on single off-site power line, IAEA warns
Europe’s largest nuclear power plant has just one remaining power line for essential nuclear safety and security functions, compared with its original 10 functional lines before the military conflict with Russia, warned Rafael Mariano Grossi, director general of the International Atomic Energy Agency.
K. Iguchi, Y. Morimoto, T. Sugiyama, S. Akahori, K. Okuno, H. Nakamura, M. Nishi
Fusion Science and Technology | Volume 39 | Number 2 | March 2001 | Pages 905-909
Divertor and Plasma-Facing Components | doi.org/10.13182/FST01-A11963355
Articles are hosted by Taylor and Francis Online.
Studies on chemical behavior of energetic deuterium implanted into SiC, Si, and graphite were carried out by means of the X-ray photoelectron spectroscopy (XPS) and the thermal desorption spectroscopy (TDS). Two chemical states of implanted deuterium were observed in SiC. It was suggested that the one was contribution of deuterium in interstitial, and the other was contribution of deuterium in defects resulted by deuterium ion (D2+) implantation. From the results for Si, it was found that implanted deuterium existed in Si with three chemical states. The deuterium behavior in graphite was different with that in SiC and in Si. The deuterium chemical behavior in SiC was discussed in comparison with that implanted into Si and graphite.
