ANS is committed to advancing, fostering, and promoting the development and application of nuclear sciences and technologies to benefit society.
Explore the many uses for nuclear science and its impact on energy, the environment, healthcare, food, and more.
Explore membership for yourself or for your organization.
Conference Spotlight
2026 ANS Annual Conference
May 31–June 3, 2026
Denver, CO|Sheraton Denver
Latest Magazine Issues
May 2026
Jan 2026
2026
Latest Journal Issues
Nuclear Science and Engineering
June 2026
Nuclear Technology
Fusion Science and Technology
Latest News
South Korea looks to Southern and NuScale
This week, the United States and South Korea have taken two steps toward deepening their nuclear partnership through two notable announcements. First, the majority-state owned Korea Hydro & Nuclear Power signed a memorandum of understanding with Birmingham, Ala.–based Southern Nuclear.
R. McEachern, C. Alford, R. Cook, D. Makowiecki, R. Wallace
Fusion Science and Technology | Volume 31 | Number 4 | July 1997 | Pages 435-441
Technical Paper | Eleventh Target Fabrication Specialists' Meeting | doi.org/10.13182/FST97-A30798
Articles are hosted by Taylor and Francis Online.
We have performed a series of preliminary experiments to determine whether sputter deposition of doped Be is a practical route to producing NIF target capsules with Be ablators. Films ranging in thickness from 7 to ∼120 µm have been deposited on spherical polymer mandrels using a bounce pan to ensure uniform coating. With no voltage bias applied to the pan, relatively porous coatings were formed that were highly permeable to hydrogen. The surface finish of these films ranged from ∼250 nm rms for 13-µm-thick films to a minimum of ∼75 nm rms for an 80-µm-thick film. Application of a voltage bias was found to significantly modify the film morphology. At a bias of 120 V, 7-µm-thick films with a dense, fine-grained microstructure were produced. These capsules had a reflective surface with a 50 nm rms roughness. Finally, to demonstrate the ability to produce a graded dopant profile, a coating was produced in which the concentration of added Cu was varied from 2.5 atom % at the beginning to zero after 40 µm of deposition.