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GAIN makes diverse selections for its third round of awards this year
The Department of Energy’s Gateway for Accelerated Innovation in Nuclear has recently awarded four third-round fiscal year 2026 vouchers to support the development of innovative nuclear technologies. Each company will get access to specific capabilities and expertise in the DOE’s national laboratory complex—in this round of awards Idaho National Laboratory, Oak Ridge National Laboratory, and Sandia National Laboratories are named—and will be responsible for a minimum 20 percent cost share, which can be an in-kind contribution.
D.R. Cohn, L. Bromberg, R.J. Leclaire, R.E. Potok, D.L. Jassby
Fusion Science and Technology | Volume 10 | Number 3 | November 1986 | Pages 1111-1116
Nuclear Technology Experiments and Facilities | doi.org/10.13182/FST86-A24881
Articles are hosted by Taylor and Francis Online.
We discuss a super high field mode of tokamak operation that uses ohmic heating or near ohmic heating to ignition. This approach could also provide high values of nτe, increasing the margin of ignition in deuterium-tritium plasmas, and opening up the possibility of some type of advanced fuel operation. D-He3 operation might be possible if high enough values of β (β ≃ .09) can be obtained. The super high field mode of operation uses very high values of B2a, where B is the magnetic field and o is the minor radius (B2a > 100 T2m). We analyze copper magnet devices with major radii from 1.7 to 3.0 meters. Minimizing or eliminating the need for auxiliary heating has the potential advantages of reducing uncertainty in extrapolating the energy confinement time of current tokamak devices, and reducing engineering problems associated with large auxiliary heating requirements. It may be possible to heat relatively short pulse, inertially cooled tokamaks to ignition with ohmic power alone. However, there may be advantages in using a very small amount of auxiliary power (less than the ohmic heating power) to boost the ohmic heating and provide a faster start-up, especially in relatively compact devices.