Home / Store / Journals / Electronic Articles / Fusion Science and Technology / Volume 55 / Number 2T
Young-Woo Kim, Seunghee Han
Fusion Science and Technology
Volume 55 / Number 2T / February 2009 / Pages 209-212
Format:electronic copy (download)
Silicon-on-insulator (SOI) structure fabricated by plasma source ion implantation (PSII) with high-power pulsed RF plasma has been studied. Oxygen ions were implanted into p-type silicon wafer and high temperature annealing was subsequently used to form SOI structure. The top silicon and the buried oxide (BOX) layer were formed with 500 ;Aring& and 400 ;Aring&, respectively, in the sample implanted with the dose of 2.5 × 1017 #/cm2 at the ion energy of -75 kV and annealed at 1350 °C for 30 min in Ar+O2 (0.5 %) ambient. This study showed the possibility of SOI fabrication using the PSII with pulsed ICP source.
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