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Interstitials in Copper-Zinc Alloys

Wolfgang Schule

Fusion Science and Technology / Volume 10 / Number 1 / Pages 113-123

July 1986

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In Cu-30 Zn alloys during irradiation with 2-MeV electrons from a Van de Graaff generator, the electrical resistivity first decreases due to radiation-enhanced ordering and then increases due to the formation of very small interstitial clusters. The activation energy during irradiation for both processes is approximately Qirr = 0.37 eV and is interpreted as half of the migration energy of freely migrating interstitials. For irradiation temperatures below 75°C, a second resistivity increase is found that is attributed to the formation of stable interstitial clusters. The observed radiation-enhanced diffusion rates below ambient temperature are many orders of magnitude smaller and larger than those predicted by the one- and the two-interstitial models, respectively, and these rates are in agreement with the predictions of the modified two-interstitial model.

 
 
 
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