Home / Store / Journals / Electronic Articles / Fusion Science and Technology / Volume 52 / Number 4 / Pages 1066-1069
David R. Boris, Zhenqiang Ma, Hao-Chih Yuan, Robert P. Ashley, John F. Santarius, Gerald L. Kulcinski, Clayton Dickerson, Todd Allen
Fusion Science and Technology / Volume 52 / Number 4 / Pages 1066-1069
Format:electronic copy (download)
Using a single junction PIN (p-type, intrinsic, n-type) diode, made of silicon, and doped with boron and phosphorus, high energy protons have been converted to electricity, through ionization from electronic stopping in the silicon, at an efficiency of 0.2%. A simulation of 3.02 MeV D-D protons has been performed, using a 3 MeV linear accelerator. Proton fluxes of ~3 × 1010 protonscm-2×s-1 were incident on a PIN diode with 0.7 cm2 of surface area facing the incident protons. Losses in efficiency as a function of proton fluence are compared with dpa (displacements per atom) rates calculated using the Monte Carlo ion transport code TRIM (Transport and Ranges of Ions in Matter).
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